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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.)  ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| MW | 2016-11-17 14:30 |
Saga | Saga Univ. | Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) MW2016-122 |
In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF ... [more] | MW2016-122 pp.33-38 |
| MW | 2016-11-17 14:55 |
Saga | Saga Univ. | Industrial microwave heating device using GaN amplifier module Kazuhiro Iyomasa, Koji Yamanaka, Takeshi Shiode, Hiroyuki Mizutani, Masaomi Tsuru, Yoshifumi Kawamura, Takaaki Yoshioka, Yuji Komatsuzaki, Yutaro Yamaguchi, Keigo Nakatani, Ryuta Komaru, Kazutomi Mori, Hiroshi Fukumoto (Mitsubishi Electric Corp.) MW2016-123 |
(To be available after the conference date) [more] | MW2016-123 pp.39-42 |
| MW, WPT | 2016-04-21 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 5.8 GHz-band high efficiency rectifier with a low resistance and high breakdown voltage GaAs Schottky Barrier Diode Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Jun Shimokawatoko, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric Co.) WPT2016-3 MW2016-3 |
High RF-DC conversion efficiency at high input power are required for rectifiers used in receivers of the microwave powe... [more] | WPT2016-3 MW2016-3 pp.11-15 |
| MW | 2015-05-28 13:50 |
Tokyo | The Univ. of Electro-Commun. | Large Signal Modeling of GaN-on-Si Transistor for Microwave Heating Christer M. Andersson, Yutaro Yamaguchi, Kazuhiro Iyomasa, Yoshifumi Kawamura, Shuichi Sakata, Koji Yamanaka, Hiroshi Fukumoto (Mitsubishi Electric) MW2015-21 |
In this paper, the large signal model of a GaN-on-Si transistor to be employed in microwave heating systems is reported.... [more] | MW2015-21 pp.1-5 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
| WPT, MW | 2015-04-16 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Prototype of the 5.8GH-band high efficiency rectifier with a high breakdown voltage GaAs SBD Marika Nakamura, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Atsushi Yamamoto, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric) WPT2015-5 MW2015-5 |
Rectifiers used for receivers of the microwave power transmission systems, such as space solar power systems, needs an i... [more] | WPT2015-5 MW2015-5 pp.21-25 |
| MW, ED | 2015-01-16 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193 |
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] | ED2014-129 MW2014-193 pp.71-76 |
| WPT | 2014-06-06 13:55 |
Tokyo | Univ. of Tokyo | Study of a 5.8GHz-band high efficiency rectifier with a high breakdown voltage GaAs schottky barrier diode Toshiyuki Tanaka, Yutaro Yamaguchi, Masaomi Tsuru, Yasuki Aihara, Atsushi Yamamoto, Yukihiro Homma, Eiji Taniguchi (Mitsubishi Electric) WPT2014-25 |
A rectifier used in receivers of microwave power transmission, such as space solar power systems, needs having high RF-D... [more] | WPT2014-25 pp.5-10 |
| MW, ED | 2013-01-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] | ED2012-121 MW2012-151 pp.49-52 |
| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| MW, ED | 2011-01-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | III-V quantum well channel MOSFET with back electrode Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148 |
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] | ED2010-188 MW2010-148 pp.69-73 |
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