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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo)  SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| SDM | 2013-11-15 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor Yasuhisa Omura, Yusuke Kondo (Kansai Univ.) SDM2013-108 |
This study tries to reproduce the unipolar “forming” process and the “reset” process of the Pt/TiO2/Pt capacitor. It is... [more] | SDM2013-108 pp.49-54 |
| ED | 2012-07-27 09:30 |
Fukui | Fukui University | Delay Time Analysis of Strained InSb HEMTs Using Quantum-Corrected Monte Carlo Method Yutaro Nagai, Jun Sato, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.), Akira Endoh, Issei Watanabe (NICT) ED2012-48 |
The strained band structures of InSb are calculated, and then the intrinsic performances of the InSb HEMTs are analyzed... [more] |
ED2012-48 pp.37-42 |
| SDM, ED (Workshop) |
2012-06-27 16:15 |
Okinawa | Okinawa Seinen-kaikan | The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field Meng-Shan Chi, Tzung-Ju Lin, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.) |
We propose a asymmetric poly-Si thin film transistor with a thicker drain and a thicker dielectric near the drain region... [more] | |
| SDM, ICD | 2011-08-26 10:25 |
Toyama | Toyama kenminkaikan | [Invited Talk]
Status and Prospect of Ultra Low Power Logic Devices Jiro Ida (KIT) SDM2011-86 ICD2011-54 |
Ultra Low Power Application of Sensor network, or, implanted medical devices where battery less, ultimately, is needed, ... [more] | SDM2011-86 ICD2011-54 pp.79-83 |
| ED | 2011-07-30 12:05 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) ED2011-53 |
Because of their extremely high electron mobility, InAs and related materials have attracted much attention as promising... [more] | ED2011-53 pp.79-84 |
| ED | 2009-06-12 09:30 |
Tokyo | Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) ED2009-44 |
Narrow band gap semiconductors such as InAs and InSb have been attracted much attention as possible channel materials to... [more] | ED2009-44 pp.41-46 |
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