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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2024-04-11 13:00 |
Kanagawa | (Primary: On-site, Secondary: Online) |
NanoBridge Based Nonvolatile Memory Macro for High-temperature Operation Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS)  ICD2024-4 |
NanoBridge (NB) is a kind of resistive-change device. We have developed NB-based memory macro with stable operations at ... [more] | ICD2024-4 pp.12-16 |
| EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] | 2024-01-25 13:10 |
Kyoto | (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] Yoshiya Abe, Kenta Yachida, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.), Hidenori Kawanishi, Mutsumi Kimura (Ryukoku Univ.) EID2023-3 |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] | EID2023-3 pp.5-8 |
| ICD | 2023-04-11 14:10 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
NanoBridge Technology for Embedded Nonvolatile Memory Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2023-11 |
NanoBridge (NB) is a kind of electrochemical resistive-change device. NBs are integrated by only two additional masks in... [more] | ICD2023-11 pp.24-28 |
| SDM | 2022-11-11 17:15 |
Online | Online | Measurement and Modeling of Cycle-to-Cycle Variability in ReRAM Devices Shoma Yoshimoto, Masaki Takemori, Yoshinari Kamakura (OIT) SDM2022-78 |
Cycle-to-cycle (C2C) variability in ReRAM devices is investigated experimentally. The measured data are fitted to the SP... [more] | SDM2022-78 pp.68-72 |
| CPSY, DC, IPSJ-ARC [detail] | 2021-07-21 10:15 |
Online | Online | Lossy Error Correction Coding for Vector-Matrix Multiplication Leo Otani, Haruhiko Kaneko (Tokyo Tech) CPSY2021-7 DC2021-7 |
Error control codes are effective to improve the reliability and precision of the vector-matrix multiplications executed... [more] | CPSY2021-7 DC2021-7 pp.37-42 |
| SDM | 2021-06-22 16:50 |
Online | Online | Application-induced TaOx ReRAM Cell Reliability Variation Tolerated High-speed Storage Chihiro Matsui, Ken Takeuchi (Univ. Tokyo) SDM2021-27 |
Storage application induces various types or errors in TaOx ReRAM cells and the storage performance degrades. To improve... [more] | SDM2021-27 pp.21-22 |
| SDM | 2021-06-22 17:10 |
Online | Online | Influence of quantized bit precision and bit-error rate in Computation-in-Memory with ReRAM on optimal answers of combinatorial optimization problems Naoko Misawa, Kenta Taoka, Shunsuke Koshino, Chihiro Matsui, Ken Takeuchi (Univ. Tokyo) SDM2021-28 |
The knapsack problem, one of combinatorial optimization problems, is solved effectively by simulated annealing in ReRAM ... [more] | SDM2021-28 pp.23-26 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
| HWS, VLD [detail] | 2020-03-05 15:20 |
Okinawa | Okinawa Ken Seinen Kaikan (Cancelled but technical report was issued) |
[Memorial Lecture]
Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance Reika Kinoshita, Chihiro Matsui, Atsuya Suzuki, Shouhei Fukuyama, Ken Takeuchi (Chuo Univ.) VLD2019-119 HWS2019-92 |
Storage Class Memories (SCMs) are used as non-volatile (NV) cache memory as well as storage. Multi-SCM storage with two ... [more] | VLD2019-119 HWS2019-92 pp.145-150 |
| CPM | 2019-02-28 16:20 |
Tokyo | Electrical characterization of metal-insulator-metal stacked structure using ZrNx thin film Hideki Kitada, Masaru Sato, Mayumi Takeyama (Kitami Institute) CPM2018-111 |
The rectification function to prevent a multivalued function and the snaking current in two-terminal operation is necess... [more] | CPM2018-111 pp.45-48 |
|
| ICD | 2018-04-19 14:55 |
Tokyo | [Invited Talk]
Low power Deep Learning hardware using emerging analog non-volatile memory Irina Kataeva (DENSO Corp.) |
In recent years, Artificial Intelligence, Deep Learning in particular, has become a hot topic of both research and pract... [more] | ||
| MBE, NC, NLP (Joint) |
2018-01-27 11:45 |
Fukuoka | Kyushu Institute of Technology | Neural Pulse Coding using ReRAM-based Neuron Devices Kazuki Nakada (Hiroshima City Univ.) NLP2017-98 |
Researches on hardware implementation of neuromorphic systems and machine learning algorithms are steadily progressing. ... [more] | NLP2017-98 pp.63-68 |
| SDM, EID | 2017-12-22 14:15 |
Kyoto | Kyoto University | Cross point synapse using amorphous oxide semiconductor for neurocomputing devices Ryo Tanaka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) EID2017-20 SDM2017-81 |
(To be available after the conference date) [more] | EID2017-20 SDM2017-81 pp.45-49 |
| SDM, ICD, ITE-IST [detail] | 2017-07-31 11:15 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | [Invited Talk]
A Cross Point Cu-ReRAM with a Novel OTS Selector for Storage Class Memory Applications Shuichiro Yasuda, Kazuhiro Ohba, Tetsuya Mizuguchi, Hiroaki Sei, Masayuki Shimuta, Katsuhisa Aratani, Tsunenori Shiimoto, Tetsuya Yamamoto, Takeyuki Sone, Seiji Nonoguchi, Jun Okuno, Akira Kouchiyama, Wataru Otsuka, Keiichi Tsutsui (Sony Semiconductor Solutions) SDM2017-34 ICD2017-22 |
(To be available after the conference date) [more] | SDM2017-34 ICD2017-22 pp.17-20 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi, Ken Takeuchi (Chuo Univ.) ICD2016-67 CPSY2016-73 |
Resistive random access memory (ReRAM) is considered as one of the next generation non-volatile memories due to its high... [more] | ICD2016-67 CPSY2016-73 p.53 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Error Tendency Analysis of Endurance in ReRAM Shouhei Fukuyama, Kazuki Maeda, Ken Takeuchi (Chuo Univ.) ICD2016-70 CPSY2016-76 |
Resistive random access memory (ReRAM) attracts attention as one of the storage class memory (SCM) because of its high s... [more] | ICD2016-70 CPSY2016-76 p.59 |
| SDM, EID | 2016-12-12 13:30 |
Nara | NAIST | First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2016-18 SDM2016-99 pp.41-44 |
| SDM, EID | 2016-12-12 13:45 |
Nara | NAIST | Relationship between memory characteristics and Schottky parameters in Pt/Nb:STO junction Toshiki Shiomi, Yuuto Hagihara, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
[more] | |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-30 14:35 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) CPM2016-89 ICD2016-50 IE2016-84 |
Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low... [more] | CPM2016-89 ICD2016-50 IE2016-84 pp.69-74 |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 09:45 |
Osaka | Central Electric Club | [Invited Talk]
A ReRAM-based Physically Unclonable Function with Bit Error Rate < 0.5% after 10 years at 125°C for 40nm embedded application Yuhei Yoshimoto, Yoshikazu Katoh, Satoru Ogasahara, Zhiqiang Wei, Kazuyuki Kouno (Panasonic Semiconductor Solutions Co., Ltd.) SDM2016-61 ICD2016-29 |
This paper presents a secure application—a physically unclonable function (PUF)—that uses the physical prope... [more] | SDM2016-61 ICD2016-29 pp.89-94 |
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