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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED (Workshop) |
2012-06-27 13:30 |
Okinawa | Okinawa Seinen-kaikan | The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) |
In this paper, we show the asymmetric I-V characteristics induced by the tapered silicon pillar of the Vertical MOSFET a... [more] | |
| SDM, ED (Workshop) |
2012-06-27 13:45 |
Okinawa | Okinawa Seinen-kaikan | A High Performance SRAM Sense Amplifier with Vertical MOSFET Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) |
In this paper, a high performance SRAM sense amplifier with vertical MOSFET is proposed, and its performances are invest... [more] | |
| ED, SDM | 2010-07-02 15:05 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Impact of Floating Body type DRAM with the Vertical MOSFET Yuto Norifusa, Tetsuo Endoh (Tohoku Univ./JST)  ED2010-98 SDM2010-99 |
Several kinds of capacitor-less DRAM cells based on planar SOI-MOSFET technology have been proposed and researched to ov... [more] | ED2010-98 SDM2010-99 pp.211-216 |
| ED, SDM | 2010-07-02 15:45 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) ED2010-120 SDM2010-121 |
In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pil... [more] | ED2010-120 SDM2010-121 pp.309-313 |
| SDM, ED | 2009-06-25 12:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84 |
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] | ED2009-89 SDM2009-84 pp.169-172 |
| SDM, ED | 2009-06-25 13:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET Tetsuo Endoh, Koji Sakui, Yukio Yasuda (Tohoku Univ./JST-CREST) ED2009-90 SDM2009-85 |
The excellent performance of 10nm gate Multi-Nano-Pillar type (M-) Vertical MOSFET has been numerically shown for the fi... [more] | ED2009-90 SDM2009-85 pp.173-176 |
| SDM, ED | 2009-06-26 09:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Future High Density Memory with Vertical Structured Device Technology Tetsuo Endoh (Tohoku Univ.) ED2009-95 SDM2009-90 |
For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor mem... [more] | ED2009-95 SDM2009-90 pp.193-196 |
| SDM, ED | 2008-07-10 10:55 |
Hokkaido | Kaderu２・７ | Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-60 SDM2008-79 |
In this paper, the device performances of sub-10nm Vertical MOSFETs are investigated. One of the drawbacks of convention... [more] | ED2008-60 SDM2008-79 pp.107-111 |
| SDM, ED | 2008-07-11 09:25 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91 |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] | ED2008-72 SDM2008-91 pp.171-175 |
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