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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2024-05-24
16:40		 Hokkaido
(Primary: On-site, Secondary: Online)		 Control and application of contactless photoelectrochemical (CL-PEC) etching for AlGaN/GaN heterostructures
Yugo Oki, Naoki Shiozawa, Takuya Togashi, Taketomo Sato (Hokkaido Univ.) ED2024-11 CPM2024-11 SDM2024-18		 The association of control parameters with etching depth and morphology was investigated for contactless photoelectroche... [more] ED2024-11 CPM2024-11 SDM2024-18
pp.37-40
CPM, ED, SDM 2023-05-19
16:30		 Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)		 Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates
Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24		 The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] ED2023-7 CPM2023-7 SDM2023-24
pp.28-31
ED, SDM, CPM 2012-05-18
13:25		 Aichi VBL, Toyohashi Univ. of Technol. Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions
Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-34 CPM2012-18 SDM2012-36		 Gallium oxide (Ga2O3) thin films were prepared by employing facile electrodeposition technique from aqueous gallium sulf... [more] ED2012-34 CPM2012-18 SDM2012-36
pp.85-89
CPM, SDM, ED 2011-05-19
11:15		 Aichi Nagoya Univ. (VBL) Characterization of SiC photoelectrochemical properties for water splitting
Tomonari Yasuda, Masashi Kato, Masaya Ichimura (NIT) ED2011-6 CPM2011-13 SDM2011-19		 SiC is chemically stable material, and strong against corrosion with electrobath. In addition, because a part of polytyp... [more] ED2011-6 CPM2011-13 SDM2011-19
pp.27-31
ED, MW 2008-01-16
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138		 The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] ED2007-207 MW2007-138
pp.7-10
ED 2007-06-16
10:10		 Toyama Toyama Univ. Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42		 This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution ... [more] ED2007-42
pp.61-65
 Results 1 - 6 of 6  /   
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