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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-10 11:20 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers Futo Hashimoto, Toma Suzuki, Hideki Minari, Nobuya Nakazaki, Jun Komachi (Sony Semiconductor Solutions), Nobuyuki Sano (Univ. of Tsukuba)  SDM2023-69 |
The capture-excitation processes of carriers are implemented in self-consistent Monte Carlo device simulations. The car... [more] | SDM2023-69 pp.31-34 |
| SDM | 2021-11-11 16:40 |
Online | Online | [Invited Talk]
SISPAD2021 Review Hideki Minari (Sony Semiconductor Solutions) SDM2021-59 |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) was held on September 27-29,... [more] | SDM2021-59 pp.33-37 |
| SDM | 2015-11-05 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
SISPAD 2015 Review Hideki Minari (Sony) SDM2015-87 |
[more] | SDM2015-87 pp.19-22 |
| SDM | 2012-11-16 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study -- Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) SDM2012-107 |
Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been n... [more] | SDM2012-107 pp.43-46 |
| SDM | 2010-11-12 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183 |
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] | SDM2010-183 pp.65-69 |
| SDM [detail] | 2008-11-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180 |
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s func... [more] | SDM2008-180 pp.67-70 |
| SDM, ED | 2008-07-09 14:10 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Quantum Modeling of Carrier Transport through Silicon Nano-devices Nobuya Mori, Hideki Minari (Osaka Univ.) ED2008-45 SDM2008-64 |
[more] | ED2008-45 SDM2008-64 pp.31-36 |
| SDM, VLD | 2007-10-30 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197 |
Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation ha... [more] | VLD2007-53 SDM2007-197 pp.15-18 |
| SDM, VLD | 2006-09-26 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | To be announced Hideki Minari, Nobuya Mori (Osaka Univ.) |
We have numerically calculated ballistic current in one-dimensional silicon nanostructures with a strained layer using a... [more] | VLD2006-48 SDM2006-169 pp.55-58 |
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