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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| NS | 2021-04-16 11:15 |
Online | Online | Study on Congestion Controlling Method for Microservice-Oriented Telecommunication Systems Masaki Ueno, Kenta Shinohara, Noritaka Horikome, Hideki Shina (NTT)  NS2021-11 |
[more] | NS2021-11 pp.59-64 |
| NS, ICM, CQ, NV (Joint) |
2020-11-26 14:25 |
Online | Online | [Invited Talk]
tbd Kenta Shinohara, Masaki Ueno, Noritaka Horikome, Hideki Shina (NTT) NS2020-74 CQ2020-46 ICM2020-25 |
[more] | NS2020-74 CQ2020-46 ICM2020-25 p.3(NS), p.3(CQ), p.37(ICM) |
| IN, NS (Joint) |
2019-03-05 09:20 |
Okinawa | Okinawa Convention Center | Experimental Evaluation of the Effect of Massive Accesses from M2M/IoT terminals in Mobile Core Networks Masaki Ueno, Go Hasegawa, Masayuki Murata (Osaka Univ.) NS2018-226 |
(To be available after the conference date) [more] | NS2018-226 pp.195-200 |
| CPM, LQE, ED | 2016-12-12 13:50 |
Kyoto | Kyoto University | Temperature Dependence of Forward Current-Voltage Characteristics in Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada, Masaki Ueno, Yoshiyuki Yamamoto (Sumitomo electric industries,Ltd.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2016-59 CPM2016-92 LQE2016-75 |
[more] | ED2016-59 CPM2016-92 LQE2016-75 pp.9-14 |
| WPT | 2016-03-08 09:50 |
Kyoto | Kyoto Univ. Uji Campus | Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87 |
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] | WPT2015-87 pp.61-65 |
| WPT (2nd) |
2015-12-10 10:00 |
Overseas | TamKang University, Tamsui Campus | Development of High Power Rectifier of 2.45 GHz using GaN Schottky Barrier Diodes with high thermal conductive AlN submounts Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaki Ueno, Masaya Okada, Yuusuke Yoshizumi (SEI) |
We aimed to develop a high power rectifier of 2.45 GHz with a GaN schottky diode that had 107 V of the breakdown voltage... [more] | |
| ED, LQE, CPM | 2015-11-26 14:00 |
Osaka | Osaka City University Media Center | Photoresponse of Homoepitaxial N-type GaN Schottky Barrier Diodes Takuya Maeda (Kyoto Univ.), Masaya Okada (Sumitomo electric industries,Ltd.), Yoshiyuki Yamamoto, Masaki Ueno (Sumitomo electric industries), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-74 CPM2015-109 LQE2015-106 |
[more] | ED2015-74 CPM2015-109 LQE2015-106 pp.33-37 |
| WPT | 2015-03-25 10:10 |
Kyoto | Kyoto Univ. Uji Campus | Development of High Power Rectifier with GaN Schottky Diode Takaki Nishimura, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.), Masaki Ueno, Yusuke Yoshizumi, Masaya Okada (SEI) WPT2014-102 |
[more] | WPT2014-102 pp.45-48 |
| ED, MW | 2014-01-17 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] | ED2013-124 MW2013-189 pp.79-84 |
| LQE, ED, CPM | 2011-11-18 11:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ED2011-92 CPM2011-141 LQE2011-115 |
[more] | ED2011-92 CPM2011-141 LQE2011-115 pp.99-102 |
| CPM, LQE, ED | 2010-11-12 11:15 |
Osaka | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] | ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
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