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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2016-11-19
10:20		 Ishikawa   Barrier properties of TiHfN alloy film applicable to Cu plug
Masaru Sato (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya, Mayumi B. takeyama (Kitami Inst. of Tech.) CPM2016-70		  [more] CPM2016-70
pp.45-48
CPM 2016-07-22
16:30		 Ehime   Growth of preferential orientation of Cu (111) plane on the thin HfNx film
Masaru Sato (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Mayumi B. takeyama (Kitami Inst. of Tech.) CPM2016-27		  [more] CPM2016-27
pp.15-18
CPM 2015-11-06
15:15		 Niigata Machinaka Campus Nagaoka Properties of transition metal nitride deposited by combination of sputtering and radical treatment
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Technol.) CPM2015-89		 We have proposed the low temperature deposition method of preparing transition metal nitride films by combination of spu... [more] CPM2015-89
pp.27-30
CPM 2013-08-02
10:55		 Hokkaido   Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-51		 Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose conc... [more] CPM2013-51
pp.63-68
CPM 2012-08-09
09:25		 Yamagata   Formation process of reactively-sputtered nano-crystalline ZrNx barrier films
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2012-44		 Thin diffusion barriers of high performance in several nm thicknesses are required as the size of Cu multilevel intercon... [more] CPM2012-44
pp.45-49
CPM 2010-07-30
09:30		 Hokkaido Michino-Eki Shari Meeting Room Low temperature of deposition of ZrNx film using radical reaction
Masaru Sato, Mayumi B. Takeyama (kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami Inst. of Tech.) CPM2010-36		 Recently, an increase in the integration density of the Si-ULSI system is realized in the 3-D packaging
technology. A t... [more]		 CPM2010-36
pp.29-34
CPM 2010-07-30
09:55		 Hokkaido Michino-Eki Shari Meeting Room Atomic layer deposition (ALD) of vanadium nitride films using TDEAV
Mayumi B. Takeyama, Masaru Sato (kitami Inst. of Tech.), Hiroshi Sudoh, Hideaki Machida (Gas-phase Growth Ltd.), Shun Ito, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (kitami inst. of tech.) CPM2010-37		 An extremely thin barrier deposited at a low temperature is desired in Cu interconnects of 32 nm node technologies. We ... [more] CPM2010-37
pp.35-38
CPM 2009-08-11
10:50		 Aomori Hirosaki Univ. Properties of ZrBx Thin Film Applicable to Cu Interconnects in Si-ULSI
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-43		 We have examined characteristics of ZrB2 films and found a peculiar property that the resistivity of the film depends on... [more] CPM2009-43
pp.51-55
CPM 2009-08-11
11:15		 Aomori Hirosaki Univ. Effectiveness of New Deposition Method for Barrier Metal Applicable to Through Silicon Via -- Properties of ZrNx Film Formed at Low Temperature --
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Yuichiro Hayasaka, Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2009-44		 A low process temperature as low as 200°C is one of the most important requirements for the metallization technology of ... [more] CPM2009-44
pp.57-60
CPM 2006-11-09
16:10		 Ishikawa Kanazawa Univ. Thermal stability and interface moｒphology in Cu/ZrN/SiOC/Si system
Atsushi Noya, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.) 		 [more] CPM2006-119
pp.37-40
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