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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-11-12
Online Online [Invited Talk] Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) SDM2021-61
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put in... [more] SDM2021-61
SDM 2017-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET
Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63
This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without deg... [more] SDM2017-63
SDM 2015-11-06
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL) SDM2015-91
 [more] SDM2015-91
SDM 2009-12-04
Nara NAIST [Invited Talk] Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs
Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) SDM2009-159
(Advance abstract in Japanese is available) [more] SDM2009-159
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.) VLD2007-57 SDM2007-201
Numerical study in conjunction with comprehensive bending
experiments has demonstrated that \orientation{100}-Si has th... [more]
VLD2007-57 SDM2007-201
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs
Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203
We have developed a system consisting of a full-3D process simulator for stress calculation and k&#183;pband calculation... [more] VLD2007-59 SDM2007-203
SDM, VLD 2006-09-26
Tokyo Kikai-Shinko-Kaikan Bldg. Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Katsumi Eikyu, Takeshi Okagaki, Motoaki Tanizawa, Kiyoshi Ishikawa, Osamu Tsuchiya (Renesas)
A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. ... [more] VLD2006-41 SDM2006-162
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