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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2009-05-15
11:20		 Aichi Satellite Office, Toyohashi Univ. of Technology Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21		 In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] ED2009-31 CPM2009-21 SDM2009-21
pp.71-76
LQE, OPE 2007-06-29
11:35		 Tokyo Kikai-Shinko-Kaikan Bldg. Room-temperature continuous wave operation of 1.3 μm InAs quantum dot lasers with GaInNAs embedded layer on GaAs substrate grown by MOCVD
Rei Hashimoto, Mitsuhiro Kushibe, Mizunori Ezaki (Toshiba RDC), Masao Nishioka, Yasuhiko Arakawa (NCRC) OPE2007-21 LQE2007-22		 Quantum dot laser on GaAs substrates is attractive device for 1.3 μm and 1.55 μm optical fiber communication because of ... [more] OPE2007-21 LQE2007-22
pp.23-28
OPE, EMT, LQE, PN 2007-01-29
13:25		 Osaka Osaka Univ. Convention Center [Invited Talk] 1.3-μｍ GaInNAs-TQW-RWG Lasers
Kouji Nakahara, Koichiro Adachi, Junichi Kasai, Takeshi Kitatani, Masahiro Aoki (Hitachi Ltd., CRL) PN2006-54 OPE2006-136 LQE2006-125		 The GaInNAs has an ideal band-lineup as compared with conventional long-wavelenth acitve materials. We investigated TQW... [more] PN2006-54 OPE2006-136 LQE2006-125
pp.41-44
LQE 2004-12-03
11:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Low-threshold operation of 1.34-μm vertical-cavity surface-emitting lasers with GaInNAs quantum wells
Mitsuki Yamada, Takayoshi Anan, Hiroshi Hatakeyama, Keiichi Tokutome, Naofumi Suzuki, Takahiro Nakamura, Kenichi Nishi (NEC) 		A 1.3-μm vertical-cavity surface-emitting laser (VCSEL) is an attractive transmitting device for use in mid-distance opt... [more] LQE2004-122
pp.21-26
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