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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2012-10-27
12:15		 Niigata   Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111		 Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] CPM2012-111
pp.97-100
CPM 2011-08-10
14:15		 Aomori   Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer
Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2011-59		 Ge and SiC nanodots were formed on Si(001) 3˚ off substrates after the formation of Si c(4x4) structure using monom... [more] CPM2011-59
pp.15-20
CPM 2009-10-30
09:00		 Toyama Toyama Prefectural University Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-96		 Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on Si(001) substrates using monomethy... [more] CPM2009-96
pp.31-36
CPM 2008-10-30
13:50		 Niigata Niigata Univ. Optical properties of Ge nanodots capped by wide gap semiconductors
Haruki Suto, Tomoyoshi Kuroda, Ariyuki Kato, Hiroshi Nishiyama, Yasunobu Inoue, Tadashi Akahane, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2008-77		 Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on a Si(001) substrate using monometh... [more] CPM2008-77
pp.13-18
CPM 2007-11-17
09:25		 Niigata Nagaoka University of Technology Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane
Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) CPM2007-116		 Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-$2^{o}$off surface was investigated. By t... [more] CPM2007-116
pp.59-64
CPM 2005-11-11
14:45		 Fukui   Changes of surface structures during reactions of monomethylgermane on Si(001) -- Toward to fabrication of Ge embedded in SiC structure --
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) 		Initial stage of surface reactions between monomethylgermane (MMGe:
GeH$_3$CH$_3$) and Si(001) surfaces has been analy... [more]		 CPM2005-155
pp.19-24
 Results 1 - 6 of 6  /   
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