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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MWPTHz 2023-12-22
10:40
Miyagi RIEC, Tohoku Univ.
(Primary: On-site, Secondary: Online)
Milliwatt-class high-power terahertz oscillations in RTD oscillator with cavity-type resonator
Hiroki Tanaka, Hidenari Fujikata, Han Feifan, Takumi Shimura, Safumi Suzuki (Titech) ED2023-60 MWPTHz2023-70
Resonant tunneling diodes (RTDs) are considered promising as compact room-temperature terahertz (THz) light sources. Alt... [more] ED2023-60 MWPTHz2023-70
pp.32-35
CCS 2017-08-10
16:00
Hokkaido Bibai Onsen Yu-rinkan THz time domain spectroscopy system using laser chaos and metal V grooved wave guide
Fumiyoshi Kuwashima, Takuya Shirao, Naoya Sakaue, Kazuyuki Iwao, Takurou Sirasaki, Siori Gouda (Fukui Univ. of Tech.), Masahiko Tani, Kazuyoshi Kurihara, Kohji Yamamoto (Univ. of Fukui), Osamu Morikawa (JCGA), Hideaki Kitahara (Univ. of Fukui), Makoto Nakajima (Osaka Univ.) CCS2017-11
The generation of a wide-range THz wave is investigated from a photoconductive antenna excited using a chaotic oscillati... [more] CCS2017-11
pp.9-12
ED 2016-01-20
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] ED2015-118
pp.37-41
ED, SDM 2014-02-28
09:25
Hokkaido Hokkaido Univ. Centennial Hall Application of resonant tunneling diode oscillators to sensors
Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] ED2013-143 SDM2013-158
pp.61-66
SCE 2013-10-02
13:35
Miyagi Tohoku University, RIEC Stack size dependence of EM wave emission from Bi-2212 IJJs
Yukio Kotaki, Tsubasa Nishikata, Akira Kawakami, Takahiro Kato, Tsuneo Suzuki, Tadachika Nakayama, Kanji Yasui, Hisayuki Suematsu, Koichi Niihara (Nagaoka Univ. of Tech.) SCE2013-20
We investigated oscillation characteristics of stacked Bi-2212 intrinsic Josephson junctions for various size (S=17×145~... [more] SCE2013-20
pp.7-12
OPE, LQE, CPM, EMD, R 2013-08-29
10:15
Hokkaido sun-refre Hakodate Oscillation frequency stabilization of a semiconductor laser diode using the direct modulation method and its application
Kohei Matsuki, Toshiya Nimonji, Syoya Tsukamoto, Takashi Sato, Masashi Ohkawa (Niigata Univ.) R2013-31 EMD2013-37 CPM2013-56 OPE2013-60 LQE2013-30
Because a semiconductor laser's oscillation frequency changes easily, its frequency stabilization is necessary for many ... [more] R2013-31 EMD2013-37 CPM2013-56 OPE2013-60 LQE2013-30
pp.15-18
ED 2009-11-30
09:00
Osaka Osaka Science & Technology Center Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation
Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] ED2009-166
pp.37-40
ED 2008-12-20
11:25
Miyagi Tohoku Univ. Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's
Nobuhiro Magome, Takuya Nishimura (Tohoku Univ.), Irina Khmyrova (Univ. of Aizu), Tetsuya Suemitsu (Tohoku Univ.), Wojtek Knap (Univ. Montpellier2), Taiichi Otsuji (Tohoku Univ.) ED2008-195
Influence of fringing electric field due to nonideality of the gate-two-dimensional electron gas (2DEG) channel capacita... [more] ED2008-195
pp.53-58
 Results 1 - 8 of 8  /   
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