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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, THz | 2021-12-21 10:20 |
Miyagi | (Primary: On-site, Secondary: Online) |
Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures Yuuto Isomae, Naoyuki Kishimoto, Takuya Hayashi, Munemasa Kunisawa (TUS), Issei Watanabe, Yoshimi Yamashita, Ryuto Machida, Shinsuke Hara, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS)  ED2021-57 |
We fabricated three-types of Al0.40In0.60Sb/Ga0.22In0.78Sb-HEMTs using epitaxial heterostructures in which the channel l... [more] | ED2021-57 pp.44-47 |
| ED, MW | 2020-01-31 16:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT) ED2019-105 MW2019-139 |
Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected ... [more] | ED2019-105 MW2019-139 pp.59-64 |
| ED | 2016-01-20 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Improvement in fmax of InP-based HEMTs for THz ICs Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118 |
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] | ED2015-118 pp.37-41 |
| MW, ED | 2009-01-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2008-211 MW2008-176 |
InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scali... [more] | ED2008-211 MW2008-176 pp.77-81 |
| MW, ED | 2009-01-15 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2008-214 MW2008-179 pp.95-99 |
| ED | 2007-11-27 13:55 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Fabrication of ultrafast InP-based HEMTs for MMIC application Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2007-188 pp.7-10 |
| MW, ED | 2005-01-18 14:25 |
Tokyo | - -, -, -, - (OKI) |
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] | ED2004-221 MW2004-228 pp.53-58 |
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