Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2015-03-02 13:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
Area dependence of thermal stability factor in perpendicular STT-MRAM analized by bi-directional data flipping model Koji Tsunoda, Masaki Aoki, Hideyuki Noshiro, Yoshihisa Iba, Chikako Yoshida, Yuuichi Yamazaki, Atsushi Takahashi, Akiyoshi Hatada, Masaaki Nakabayashi, Toshihiro Sugii (LEAP) SDM2014-166 |
We report a statistical analysis of the thermal stability factor (delta) for the top-pinned perpendicular magnetic tunne... [more] |
SDM2014-166 pp.23-28 |
AP, RCS (Joint) |
2014-11-13 10:25 |
Yamagata |
Yamagata University, Yonezawa Campus |
Propagation Test on Millimeter Wave Communication for Railway Trains Tetsunori Hattori, Akira Kurita, Eisuke Ueguri, Tsukasa Kudo (JR East), Kaoru Tsukamoto, Akihiro Okazaki (Mitsubishi Electric) RCS2014-210 |
In recent years, aiming realization of the large-capacity radio communication between the ground equipment and the onboa... [more] |
RCS2014-210 pp.79-84 |
CS |
2014-11-07 09:15 |
Hokkaido |
Shiretoko (Hokkaido) |
Producer Mobility in NDN Based on Interest Redirection Siran Zhang (Waseda Univ.), Zhiwei Yan (CNNIC), Sho Harada, Yong-Jin Park, Hidenori Nakazato (Waseda Univ.) CS2014-66 |
Named Data Networking (NDN) is designed for efficient content delivery, although producer mobility support is one of the... [more] |
CS2014-66 pp.75-80 |
SC |
2014-03-14 15:35 |
Tokyo |
National Institute of Informatics |
Services Computing Platform for Wi-Fi Direct Communication between Android Terminals Hiroshi Sunaga, Shota Kato (Osaka Inst. of Tech.) SC2013-22 |
This paper describes our new Services Computing Platform for Android direct communication applications which offers grea... [more] |
SC2013-22 pp.19-24 |
ED |
2013-12-16 17:25 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
1.89 THz Lasing at 160 K from THz-QCL with Indirect Injection Scheme Miho Sasaki (RIKEN/Saitama Univ.), Tsung-Tse Lin (RIKEN), Hideki Hirayama (RIKEN/Saitama Univ.) ED2013-99 |
Terahertz quantum cascade laser (THz-QCL) is expected as a compact terahertz laser light source which realizes high outp... [more] |
ED2013-99 pp.53-56 |
SDM |
2013-11-15 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] |
SDM2013-111 pp.65-70 |
IN, NS (Joint) |
2011-03-04 10:20 |
Okinawa |
Okinawa Convention Center |
An inquiry into load reduction in 3G core and radio access network with introduction of a traffic offload system Masato Tachiki, Yasuyuki Oikawa, Takashi Komuro (NTT docomo) NS2010-229 |
Recently, since the number of smart phones is increasing, the amount of traffic which passes through a mobile career net... [more] |
NS2010-229 pp.375-378 |
IN, NS (Joint) |
2011-03-04 10:40 |
Okinawa |
Okinawa Convention Center |
A study on Direct Tunnel application to 3G core network Yasuyuki Oikawa, Masato Tachiki, Takashi Komuro (DOCOMO) NS2010-230 |
Traffic volume handled by the spread of smart phones in mobile network has been an explosive increase these days, that p... [more] |
NS2010-230 pp.379-382 |
ED, SDM |
2010-06-30 16:25 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2010-62 SDM2010-63 |
A resonant tunneling diode (RTD) is one of high-speed electron devices with negative differential resistance (NDR) chara... [more] |
ED2010-62 SDM2010-63 pp.49-53 |
ICD |
2010-04-22 15:45 |
Kanagawa |
Shonan Institute of Tech. |
A 32-Mb SPRAM with localized bi-directional write driver, '1'/'0' dual-array equalized reference scheme, and 2T1R memory cell layout Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi (Hitachi), Shoji Ikeda (Tohoku Univ.), Haruhiro Hasegawa, Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2010-10 |
A 32-Mb SPin-transfer torque RAM (SPRAM) chip was demonstrated with an access time of 32 ns and a cell write-time of 40 ... [more] |
ICD2010-10 pp.53-57 |
SDM, ED |
2009-06-26 11:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88 |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] |
ED2009-93 SDM2009-88 pp.185-188 |
SDM |
2008-12-05 13:50 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] |
SDM2008-189 pp.27-30 |
ICD |
2007-04-12 13:00 |
Oita |
|
[Invited Talk]
2-Mb SPRAM (SPin-transfer torque RAM) with Bit-by-bit Bi-Directional Current Write and Parallelizing-Direction Current Read Riichiro Takemura, Takayuki Kawahara, Katsuya Miura (Hitachi), Jun Hayakawa (Hitachi/Tohoku Univ.), Shoji Ikeda, Young Min LEE, Ryutaro Sasaki (Tohoku Univ.), Yasushi Goto, Kenchi Ito (Hitachi), Toshiyasu Meguro, Fumihiro Matsukura (Tohoku Univ.), Hiromasa Takahashi (Hitachi/Tohoku Univ.), Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2007-6 |
A 1.8-V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2 µm logic process with MgO tunneling barrier cell demo... [more] |
ICD2007-6 pp.29-34 |