Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, CPM, ED |
2020-11-26 10:05 |
Online |
Online |
Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) ED2020-1 CPM2020-22 LQE2020-52 |
In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method... [more] |
ED2020-1 CPM2020-22 LQE2020-52 pp.1-4 |
CPM, LQE, ED |
2019-11-22 14:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Estimation of Internal Quantum Efficiency in Various InGaN Single Quantum Wells with Different Qualities by Simultaneous Photoacoustic and Photoluminescence Measurements Keito Mori, Yuchi Takahashi, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (SONY) ED2019-57 CPM2019-76 LQE2019-100 |
In order to comprehensively understand the optical properties of nitride semiconductors, we believe accurate measurement... [more] |
ED2019-57 CPM2019-76 LQE2019-100 pp.101-106 |
LQE |
2016-12-16 11:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Memorial Lecture]
Determination of internal quantum efficiency and recombination lifetime by simultaneous photo-acoustic and photoluminescence measurements in GaN Kohei Kawakami, Takashi Nakano, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.) LQE2016-99 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] |
LQE2016-99 pp.15-20 |
ED, LQE, CPM |
2015-11-26 15:55 |
Osaka |
Osaka City University Media Center |
Determination of internal quantum efficiency in GaN by simultaneous measurements of photoluminescence and photo-acoustic signals Takashi Nakano, Kouhei Kawakami, Atsushi A. Yamaguchi (KIT) ED2015-78 CPM2015-113 LQE2015-110 |
Internal quantum efficiency (IQE) is usually estimated from temperature dependence of photoluminescence (PL) intensity b... [more] |
ED2015-78 CPM2015-113 LQE2015-110 pp.53-58 |
ITE-IDY, EID, IEE-EDD |
2013-01-24 15:16 |
Shizuoka |
Shizuoka Univ. |
Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) EID2012-21 |
We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quant... [more] |
EID2012-21 pp.49-52 |
ED, LQE, CPM |
2012-11-30 14:55 |
Osaka |
Osaka City University |
The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115 |
Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficienc... [more] |
ED2012-87 CPM2012-144 LQE2012-115 pp.103-108 |
EID, ITE-IDY, IEE-EDD |
2012-01-27 14:38 |
Akita |
Akita University |
Measurement of two-wavelength excited photoluminescence in Ba3Si6O12N2:Eu2+ phodphor Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Yasuo Shimomura (STRC, Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2011-19 |
One candidate of efficient and reliable phosphor materials, Ba3Si6O12N2:Eu2+, is suitable for the combination with UV- t... [more] |
EID2011-19 pp.21-24 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL |
2011-01-28 14:35 |
Kochi |
Kochi University of Technology |
Photoluminescence Characterization of AlGaN-Based Crystals for Deep Ultraviolet Region Kouhei Igarashi, Ryo Ishioka, Yusuke Tsukada, Takeshi Fukuda, Zentaro Honda (Saitama Univ.), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) EID2010-31 |
In order to improve the quality of AlGaN-based crystals for deep-UV light emission, we studied photoluminescence (PL) of... [more] |
EID2010-31 pp.41-44 |
ITE-IDY, EID, IEIJ-SSL, IEE-EDD |
2010-01-28 14:20 |
Fukuoka |
Kyusyu Univ. (Chikushi Campus) |
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) |
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an ... [more] |
EID2009-55 pp.33-36 |
OPE |
2008-12-19 14:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fabrication and evaluation of Er2SiO5 crystal thin film by spray CVD method Jun Yoshizawa, Hideo Isshiki, Tadamasa Kimura (UEC) OPE2008-139 |
The Er2SiO5 nano-structured crystalline film can be expected to be one of key materials for the silicon photonics. The E... [more] |
OPE2008-139 pp.17-22 |