Print edition: ISSN 0913-5685
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ED2006-152
X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.)
pp. 1 - 5
ED2006-153
Improvement of Breakdown Voltage of AlGaN/GaN HEMT
Ken Nakata, Takeshi Kawasaki, Keita Matsuda, Takeshi Igarashi, Seiji Yaegashi (Eudyna)
pp. 7 - 12
ED2006-154
RF characteristics of AlGaN/GaN-HEMTs on Si substrates
Hideyuki Okita, Juro Mita, Yoshiaki Sano, Toshiharu Marui, Masanori Itoh, Shinichi Hoshi, Fumihiko Toda, Shohei Seki (Oki), Takashi Egawa (NIT)
pp. 13 - 18
ED2006-155
Study on crystal growth of AlGaN/GaN HEMT on SiC substrate
Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
pp. 19 - 22
ED2006-156
GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures
Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
pp. 23 - 27
ED2006-157
Interface control for GaN-based electron devices
Takeshi Kimura, Junji Kotani, Hiroki Kato, Masafumi Tajima, Eri Ogawa, Chihoko Mizue, Tamotsu Hashizume (Hokkaido University)
pp. 29 - 34
ED2006-158
Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT)
pp. 35 - 38
ED2006-159
Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy
Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 39 - 43
ED2006-160
Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method
Tokuo Yodo, Yuki Shiraishi, Kiyotaka Hirata, Hiroyuki Tomita, Norikaki Nishie, Hiroaki Horibe, Keigo Iwata, Yoshiyuki Harada (Osaka Inst. of Tech.)
pp. 45 - 49
ED2006-161
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Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Ulrich T Schwarz, Harald Braun (Regensburg Univ.), Shinichi Nagahama, Takashi Mukai (Nichia Corp.)
pp. 51 - 55
ED2006-162
Growth and optical properties of InGaN/GaN quantum wells on semipolar {11-22} GaN substrates
Masaya Ueda, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia)
pp. 57 - 61
ED2006-163
Fabrication of optical communication wavelength photodetector using GaN/AlN multiple quantum disk nanocolumn on Si(111) substrate
Hiroyuki Uchida, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
pp. 63 - 67
ED2006-164
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy
Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei)
pp. 69 - 73
ED2006-165
Characteristics of Cathodoluminescence from bulk InGaN microcrystals
Hisashi Kanie, Yuji Sema (Tokyo Univ. of Science)
pp. 75 - 78
ED2006-166
Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime
Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba)
pp. 79 - 82
ED2006-167
Fabrication of GaN-based unipolar UV LEDs grown by MOVPE
Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.)
pp. 83 - 86
ED2006-168
Fabrication and Characterization of UV light emitter on various substrates
Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko)
pp. 87 - 92
ED2006-169
GaN films deposited by CS-MBD with pulsed source feeding
Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.)
pp. 93 - 96
ED2006-170
Maskless Epitaxial Lateral Overgrowth of GaN Using Dimethylhydrazine as a Nitrogen Precursor
Jun Shimizu, Toshiyuki Takizawa, Tetsuzo Ueda (Matsushita Electric)
pp. 97 - 101
ED2006-171
GaN/InAlN/GaN Hetero Barrier Varactor Diodes
Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.)
pp. 103 - 106
ED2006-172
Impact of acceptor concentration on electronic properties of n-GaN/p-SiC heterojunction for GaN/SiC heterojunction bipolar transistor
Koichi Amari, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 107 - 112
ED2006-173
Direct nitridation of SiC surface and characterization of nitride layer by XPS
Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
pp. 113 - 116
ED2006-174
Position and Size Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE
Taihei Yamaguchi (Ritsumeikan Univ.), Hiroyuki Naoi (Ritsumeikan univ. COE), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 117 - 120
ED2006-175
Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method
Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.)
pp. 121 - 125
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.