IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 107, Number 319

Electron Device

Workshop Date : 2007-11-16 / Issue Date : 2007-11-09

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Table of contents

ED2007-179
Electrical Characterization of Yttriumaluminate(YAlO)Film
Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.)
pp. 1 - 6

ED2007-180
Galvanic Corrosion Suppression of High-k/Metal Gates
Daisuke Watanabe, Hidemitsu Aoki, Saori Hotta, Chiharu Kimura, Takashi Sugino (Osaka Univ)
pp. 7 - 11

ED2007-181
Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water
Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.)
pp. 13 - 17

ED2007-182
High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
pp. 19 - 22

ED2007-183
Reliability Study of AlGaN/GaN HEMTs Device
Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba)
pp. 23 - 26

ED2007-184
Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.)
pp. 27 - 31

ED2007-185
Leakage Current Screening for AlGaN/GaN HEMT Mass-Production
Fumikazu Yamaki, Kazuaki Ishii, Masahiro Nishi, Hitoshi Haematsu, Yasunori Tateno, Haruo Kawata (EUD)
pp. 33 - 37

ED2007-186
A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics
Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.)
pp. 39 - 44

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan