Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2007-237
MBE-VLS growth of GaAs nanowires on (111)Si substrate
Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.)
pp. 1 - 4
ED2007-238
Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE
Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.)
pp. 5 - 10
ED2007-239
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope
Maciej Ligowski (Shizuoka Univ./Warsaw Univ. of Tech.), Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.)
pp. 11 - 16
ED2007-240
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer
Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.)
pp. 17 - 22
ED2007-241
[Invited Talk]
InP ballistic transistors
Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech)
pp. 23 - 28
ED2007-242
Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions
Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.)
pp. 29 - 32
ED2007-243
Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and its Application to Logic Gates
Shaharin Fadzli Abd Rahman, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.)
pp. 33 - 38
ED2007-244
Development of high-efficiency thermoelectric devices using Si nanostructures
Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.)
pp. 39 - 42
ED2007-245
Approaches to the high temperature operation of the carbon nanotube single electron transistor
Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN)
pp. 43 - 46
ED2007-246
Proposal of CdTe X-ray image sensor driven by FEA with focusing electrode
Yuichiro Hanawa, Takuya Sakata, Takashi Soda, Gui Han, Hisashi Morii, Katsumi Matsubara, Susumu Yamashita (RIE. Shizuoka Univ.), Masayoshi Nagao, Seigo Kanemaru (AIST), Yoichiro Neo, Toru Aoki, Hidenori Mimura (RIE. Shizuoka Univ.)
pp. 47 - 50
ED2007-247
Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals)
pp. 51 - 56
ED2007-248
Analysis on 4RTD Logic Circuits
Tomohiko Ebata, Hiroki Okuyama, Takao Waho (Sophia Univ.)
pp. 57 - 62
ED2007-249
Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates
Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.)
pp. 63 - 68
ED2007-250
Half adder operation using 2-output single-electron device composed of a Si nanodot array
Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
pp. 69 - 73
ED2007-251
Single-electron circuit for stochastic data processing using nano-MOSFETs
Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL)
pp. 75 - 79
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.