Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-8
Preparation and Evaluation of SrS:Cu films for blue EL elements
Masaaki Isai, Yuji Kurachi, Norifumi Yamada, Toshinori Takeuchi, Takashi Hochin (Shizuoka Univ.)
pp. 1 - 5
SDM2009-9
Evaluation of SrS:Cu films for blue EL elements
Norifumi Yamada, Takashi Hochin, Masaaki Isai (Shizuoka Univ.)
pp. 7 - 10
SDM2009-10
Effect of quartz tube on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering
Takayuki Hosokawa, Satoshi Sekigawa, Masaaki Isai (Shizuoka Univ.)
pp. 11 - 15
SDM2009-11
Property of Ga2O3 films and evaluation of oxygen sensors properties
Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.)
pp. 17 - 20
SDM2009-12
Preparation of TiO2 thin films by RF magnetron sputtering method and their photocatalytic properties
Tatsuya Ito, Tatsuya Endo, Masaaki Isai (Shizuoka Univ.), Tetsuya Sakai, Yoichi Hoshi (Tokyo Polytech. Univ.)
pp. 21 - 24
SDM2009-13
A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications
Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 25 - 30
SDM2009-14
Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on the First-Principle Calculation
Yuki Nakashima, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 31 - 35
SDM2009-15
Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates
Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)
pp. 37 - 42
SDM2009-16
Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method
Govindasamy Rajesh, Hisashi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ.)
pp. 43 - 47
SDM2009-17
MBE-VLS growth of compound semiconductors nanowires on Si substrates
Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.)
pp. 49 - 52
SDM2009-18
Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLP
Mouleeswaran Deivasigamani., Tadanobu Koyama, Yasuhiro Hayakawa (Shizuoka Univ.)
pp. 53 - 58
SDM2009-19
Growth of GaP on Si Substrates at High Temperature by MOVPE
Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.)
pp. 59 - 64
SDM2009-20
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells.
Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.)
pp. 65 - 70
SDM2009-21
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.)
pp. 71 - 76
SDM2009-22
MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire
Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.)
pp. 77 - 81
SDM2009-23
a-plane GaN grown on r-plane sapphire by MOVPE
Bei Ma, Reina Miyagawa, Weiguo Hu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 83 - 86
SDM2009-24
Operation stability assessment of AlGaN/GaN HEMT
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.)
pp. 87 - 90
SDM2009-25
Electrochemical oxidation of GaN for surface control structure
Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.)
pp. 91 - 94
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.