IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 112, Number 19

Organic Molecular Electronics

Workshop Date : 2012-04-27 - 2012-04-28 / Issue Date : 2012-04-20

[PREV] [NEXT]

[TOP] | [2009] | [2010] | [2011] | [2012] | [2013] | [2014] | [2015] | [Japanese] / [English]

[PROGRAM] [BULK PDF DOWNLOAD]


Table of contents

OME2012-1
[Invited Talk] Development of Organic Photovoltaic Cell Based on Small Molecules
Tetsuya Taima (kanazawa Univ.)
pp. 1 - 4

OME2012-2
[Invited Talk] Preparation of Organic-Inorganic Hybrid Materials and Photonic Applications
Okihiro Sugihara (Tohoku Univ.)
pp. 5 - 8

OME2012-3
Fabrication and Performance of Organic Solar Cells Using Hole-transporting Amorphous Molecular Materials with High Charge Carrier Mobility
Hiroshi Kageyama (Univ. Ryukyus), Yutaka Ohmori (Osaka Univ.), Yasuhiko Shirota (Fukui Univ. Technol.)
pp. 9 - 13

OME2012-4
Effects of Guided Filament Formation in NiO-ReRAM Utilizing Bio Nano Process -- Control of defects in thin films --
Mutsunori Uenuma, Takahiko Ban, Zheng Bin, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
pp. 15 - 20

OME2012-5
[Invited Talk] Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization
Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.)
pp. 21 - 26

OME2012-6
[Invited Talk] Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT
Shin-Ichiro Kuroki (Tohoku Univ.)
pp. 27 - 32

OME2012-7
Control of Crystallization Behavior of Silicon Thin Films by Semiconductor Blue-Multi-Diode-Laser Annealing
Katsuya Shirai, Jean de Dieu Mugiraneza, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP)
pp. 33 - 36

OME2012-8
Crystallization of Si Thin Film on Poly-Imide Substrate by Semiconductor Blue Multi-Laser Diode Annealing
Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Takashi Noguchi (Univ. Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP)
pp. 37 - 39

OME2012-9
Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki Ogata, Kenji Ichijo, Kenji Kondo, Yasunori Okabe, Yusuke Shika, Shinya Kamo, Akito Hara (Tohoku Gakuin Univ.)
pp. 41 - 44

OME2012-10
Bottom Gate TFT using Low Temperature Deposited Nanocrystalline-Si
Asuka Syuku, Eiji Takahashi, Yasunori Andoh (Nissin Electric)
pp. 45 - 48

OME2012-11
[Invited Talk] Low-Temperature Crystallization of Amorphous Semiconductor Films Using Only Soft X-ray Irradiation
Naoto Matsuo, Akira Heya, Takayasu Mochizuki, Shuji Miyamoto, Kazuhiro Kanda (Univ Hyogo)
pp. 49 - 54

OME2012-12
[Invited Talk] Excimer laser induced super lateral growth of a-Ge film
Wenchang Yeh (Shimane Univ.)
pp. 55 - 59

OME2012-13
Seed-less melting growth of Ge(Si) on Insulator -- Large grain formation by Si segregation --
Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 61 - 62

OME2012-14
Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation
Shohei Hayashi, Ryohei Matsubara, Yuji Fujita, Mitsuhisa Ikeda, Seiichiro Higashi (Hiroshima Univ.)
pp. 63 - 66

OME2012-15
Control of Grain Growth Using Amorphous Si Strips and Slit Masks Induced by Micro-Thermal-Plasma-Jet Crystallization
Yuji Fujita, Shohei Hayashi, Seiichiro Higashi (Hiroshima Univ.)
pp. 67 - 70

OME2012-16
Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer
Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.)
pp. 71 - 73

OME2012-17
Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering
Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus)
pp. 75 - 77

OME2012-18
Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT
Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP)
pp. 79 - 82

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan