IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 113, Number 351

Silicon Device and Materials

Workshop Date : 2013-12-13 / Issue Date : 2013-12-06

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Table of contents

SDM2013-116
Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress
Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 1 - 5

SDM2013-117
Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing
Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 7 - 11

SDM2013-118
Photo Sensor using Poly-Si Thin-Film Devices
Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 13 - 18

SDM2013-119
Silicon nanowire growth by vapor liquid solid mode using indium dots
Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST)
pp. 19 - 23

SDM2013-120
Study of Thin Film Solar Cell with Electric-Field Effect to Control Carrier Recombination
Shota Wakamiya, Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo)
pp. 25 - 29

SDM2013-121
Fabrication of n-type Silicon Solar Cells by boron doping method using laser process
Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST)
pp. 31 - 35

SDM2013-122
Fabrication of Single-Crystalline Silicon Solar Cells by Laser Doping using Phosphorus-Doped Silicon Nano Ink
Takanori Okamura, Hideki Nishimura, Takashi Fuyuki (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin)
pp. 37 - 41

SDM2013-123
Design and development of Gate Array using Poly-Si TFT
Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 43 - 47

SDM2013-124
Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)
pp. 49 - 53

SDM2013-125
[Invited Talk] Crystallization of Si Films and the Applications using BLDA (Blue Laser-Diode Annealing)
Takashi Noguchi, Tatsuya Okada (Univ. of Ryukyus)
pp. 55 - 59

SDM2013-126
Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation -- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film --
Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.)
pp. 61 - 66

SDM2013-127
Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source
Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus)
pp. 67 - 72

SDM2013-128
[Invited Talk] On-chip FRET aptasensor built on the surface of graphene derivative
Yuko Ueno, Kazuaki Furukawa (NTT)
pp. 73 - 78

SDM2013-129
The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM)
Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
pp. 79 - 83

SDM2013-130
Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation
Kazuki Watanabe, Masaki Yamaguchi, Hiroyuki Nishikawa (Shibaura Inst. of Tech.)
pp. 85 - 89

SDM2013-131
Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 91 - 96

SDM2013-132
A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
pp. 97 - 100

SDM2013-133
Characterization of interface states in SiC MOS structures with various crystal faces by conductance method
Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 101 - 105

SDM2013-134
Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride
Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST)
pp. 107 - 112

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan