IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 115, Number 65

Silicon Device and Materials

Workshop Date : 2015-05-28 - 2015-05-29 / Issue Date : 2015-05-21

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Table of contents

SDM2015-18
Synthesis of graphenes by chemical vapor deposition using liquid precursor
Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech)
pp. 1 - 4

SDM2015-19
Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading
Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.)
pp. 5 - 10

SDM2015-20
Study on self-assembled monolayers by the immersion method on SiC substrate
Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech)
pp. 11 - 15

SDM2015-21
Optical properties of InGaN nanoplates grown by molecular beam epitaxy
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.)
pp. 17 - 19

SDM2015-22
Control of N composition of GaAsN alloy grown by surface nitridation
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.)
pp. 21 - 26

SDM2015-23
Growth and preliminary MOSFETs of corundum-structured oxide semiconductors
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.)
pp. 27 - 30

SDM2015-24
Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method
Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.)
pp. 31 - 34

SDM2015-25
Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.)
pp. 35 - 39

SDM2015-26
Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator
Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.)
pp. 41 - 44

SDM2015-27
Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation
Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
pp. 45 - 50

SDM2015-28
Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates
Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
pp. 51 - 56

SDM2015-29
Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels
Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT)
pp. 57 - 61

SDM2015-30
Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.)
pp. 63 - 66

SDM2015-31
Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ
Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech)
pp. 67 - 69

SDM2015-32
Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT)
pp. 71 - 76

SDM2015-33
Effects of annealing on properties of electrochemically deposited CuxZnyS thin films
Tong Bayingaerdi, Masaya Ichimura (NITech)
pp. 77 - 80

SDM2015-34
Influence of stirring on SnS deposition using chemical bath deposition
Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.)
pp. 81 - 84

SDM2015-35
Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition
Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT)
pp. 85 - 90

SDM2015-36
Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO
Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 91 - 95

SDM2015-37
Observation of fluorescence from Legionella pneumophila capturedin a microfluidic chip
Yusuke Nishimura, Ryuhei Hayashi, Hirokazu Nakazawa, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii (Toyohashi Univ. of Tech.), Katsuyuki Machida (Tokyo Institute of Tech., NTT-AT), Kazuya Masu (Tokyo Institute of Technology, NTT Advanced Tech.), Changle Wang, Ken-Ichiro Iida, Mitsumasa Saito, Shin-ichi Yoshida (Kyusyu Univ.)
pp. 97 - 100

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan