IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2017-10-25 - 2017-10-26 / Issue Date : 2017-10-18

SDM2017-50
[Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP
Tomoyasu Kakegawa, Takuya Futase (SanDisk)
pp. 1 - 7

SDM2017-51
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ)
pp. 9 - 14

SDM2017-52
Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 15 - 19

SDM2017-53
Nanoscale conformal doping technology by spin on diffusion source
Tetsuro Kinoshita, Shunichi Mashita, Takuya Ohashi, Yoshihiro Sawada, Yohei Kinoshita, Satoshi Fujimura (TOK)
pp. 21 - 24

SDM2017-54
[Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 25 - 30

SDM2017-55
[Invited Talk] Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing -- Comprehensive Big-Data-Based Monitoring System for Yield Analysis in Semiconductor Manufacturing --
Hiroshi Akahori (Toshiba Memory), Kouta Nakata, Ryohei Orihara, Yoshiaki Mizuoka, Kentaro Takagi (Toshiba), Kenichi Kadota, Takaharu Nishimura, Yukako Tanaka, Hidetaka Eguchi (Toshiba Memory)
pp. 31 - 33

SDM2017-56
A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit
Hidekazu Ishii (Tohoku Univ.), Masaaki Nagase, Nobukazu Ikeda (Fujikin Inc.), Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
pp. 35 - 38

SDM2017-57
Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.)
pp. 39 - 44

SDM2017-58
[Invited Lecture] High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics)
pp. 45 - 49

SDM2017-59
Pinning Voltage Control of CMOS Image Sensor by measuring sheet resistance at micro test structure in scribe line
Yotaro Goto (RSMC), Tadasihi Yamaguchi, Masazumi Matsuura (REL), Koji Iizuka (RSMC)
pp. 51 - 55

SDM2017-60
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.)
pp. 57 - 62

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan