IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2023-08-01 - 2023-08-03 / Issue Date : 2023-07-25

SDM2023-35
[Invited Talk] Development of small-size high-resolution cyclic ADC with latest CMOS technology
Takashi Oshima, Keisuke Yamamoto, Goichi Ono (Hitachi)
pp. 1 - 5

SDM2023-36
A research on a cryogenic ADC for acquisition of environmental noise near quantum devices.
Tomoya Yamada, Ryozo Takahashi, Takuji Miki, Makoto Nagata (Kobe Univ.)
pp. 6 - 9

SDM2023-37
Evaluation on Flip-Chip Packaging for Quantum Computers at Cryogenic Temperature
Misato Taguchi, Ryozo Takahashi (Kobe Univ.), Masako Kato, Nobuhiro Kusuno (Hitachi, Ltd), Takuji Miki, Makoto Nagata (Kobe Univ.)
pp. 10 - 13

SDM2023-38
[Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions -- Review R and D of Semiconductor device and LSI for these 43 years --
Koichiro Ishibashi (UEC)
pp. 14 - 15

SDM2023-39
[Invited Talk] Research Trends in Low Power Sensors and Wireless Technology
Shiro Dosho, Noboru Ishihara, Hiroyuki Ito (TIT)
pp. 16 - 21

SDM2023-40
[Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST)
pp. 22 - 27

SDM2023-41
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST)
pp. 28 - 31

SDM2023-42
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT)
pp. 32 - 35

SDM2023-43
[Invited Talk] A 33kDMIPS 6.4W Vehicle Communication Gateway Processor Achieving 10Gbps/W Network Routing, 40ms CAN Bus Start-Up and 1.4mW Standby
Kenichi Shimada, Keiichiro Sano, Kazuki Fukuoka, Hiroshi Morita, Masayuki Daito, Tatsuya Kamei, Hiroyuki Hamasaki, Yasuhisa Shimazaki (Renesas)
pp. 36 - 40

SDM2023-44
A 1W/8R 20T SRAM Codebook for Deep Learning Processors to Reduce Main Memory Bandwidth
Ryotaro Ohara, Masaya Kabuto, Masakazu Taichi, Atsushi Fukunaga, Yuto Yasuda, Riku Hamabe, Shintaro Izumi, Hiroshi Kawaguchi (Kobe Univ)
pp. 41 - 44

SDM2023-45
[Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices
Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)
pp. 45 - 49

SDM2023-46
[Invited Talk] Technology Trends in CMOS Devices for Advanced Logic LSIs -- FinFET, BS-PDN, GAA-NS-FET, CFET, 2D-CFET --
Hitoshi Wakabayashi (Tokyo Tech)
pp. 50 - 55

SDM2023-47
Multi-Output MOSFET for Standard Sensor/Circuit Design Platform Device
Tomochika Harada (Yamagata University)
pp. 56 - 59

SDM2023-48
[Invited Talk] Current issue & development prospects for 2D layered material devices
Kosuke Nagashio (UTokyo)
p. 60

SDM2023-49
[Invited Talk] Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability
Yuta Aiba, Hitomi Tanaka, Fumie Kikushima, Hiroki Tanaka, Toshio Fujisawa, Hideko Mukaida, Tomoya Sanuki (KIOXIA)
p. 61

SDM2023-50
[Invited Talk] Energy Field, Computer Shape
Noriyuki Miura (Osaka Univ.)
pp. 62 - 63

SDM2023-51
[Invited Talk] Load Adaptive Active Gate Driver Integrated Circuit for Power Device
Shusuke Kawai, Takeshi Ueno, Satoshi Takaya, Koutaro Miyazaki (Toshiba), Kohei Onizuka (Toshiba Europe Limited), Hiroaki Ishihara (Toshiba)
pp. 64 - 69

SDM2023-52
Real-Time Gate Current Change Gate Driver IC to Adapt to Operating Condition Variations of SiC MOSFETs
Dibo Zhang, Kohei Horii, Katsuhiro Hata, Makoto Takamiya (UTokyo)
pp. 70 - 73

SDM2023-53
Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage
Haifeng Zhang, Dibo Zhang, Hiromu Yamasaki, Katsuhiro Hata (Univ. of Tokyo), Keiji Wada (Tokyo Metropolitan Univ.), Kan Akatsu (Yokohama National Univ.), Ichiro Omura (Kyusyu Institute of Technology), Makoto Takamiya (Univ. of Tokyo)
pp. 74 - 78

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan