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Technical Committee on Lasers and Quantum Electronics (LQE) (Searched in: 2008)
Search Results: Keywords 'from:2008-11-27 to:2008-11-27'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2008-11-27 09:30 |
Aichi | Nagoya Institute of Technology | Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)  ED2008-152 CPM2008-101 LQE2008-96 |
GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] | ED2008-152 CPM2008-101 LQE2008-96 pp.1-6 |
| LQE, ED, CPM | 2008-11-27 09:55 |
Aichi | Nagoya Institute of Technology | Random lasing in GaN nanocolumns Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) ED2008-153 CPM2008-102 LQE2008-97 |
Self-organized GaN nanocolumns are one-dimensional columnar nano-crystals, which have about 100 nm in diameter and 1 $\m... [more] | ED2008-153 CPM2008-102 LQE2008-97 pp.7-12 |
| LQE, ED, CPM | 2008-11-27 10:20 |
Aichi | Nagoya Institute of Technology | A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ED2008-154 CPM2008-103 LQE2008-98 |
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. ... [more] | ED2008-154 CPM2008-103 LQE2008-98 pp.13-16 |
| LQE, ED, CPM | 2008-11-27 10:55 |
Aichi | Nagoya Institute of Technology | Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) ED2008-155 CPM2008-104 LQE2008-99 |
We have succeeded in epitaxial growth of high-quality nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates using r... [more] | ED2008-155 CPM2008-104 LQE2008-99 pp.17-20 |
| LQE, ED, CPM | 2008-11-27 11:20 |
Aichi | Nagoya Institute of Technology | Improvement of AlN-template quality for deep-UV and UV light emitters Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin) ED2008-156 CPM2008-105 LQE2008-100 |
Misfit-dislocation and related defects were grown on hetero-interface between substrate and epitaxial layer, and influen... [more] | ED2008-156 CPM2008-105 LQE2008-100 pp.21-24 |
| LQE, ED, CPM | 2008-11-27 11:45 |
Aichi | Nagoya Institute of Technology | Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) ED2008-157 CPM2008-106 LQE2008-101 |
In this study, we report the growth and characterization of M-plane InN films on LiAlO2 (100) substrates by radio-freque... [more] | ED2008-157 CPM2008-106 LQE2008-101 pp.25-28 |
| LQE, ED, CPM | 2008-11-27 13:10 |
Aichi | Nagoya Institute of Technology | Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.) ED2008-158 CPM2008-107 LQE2008-102 |
We have fabricated several hundreds nano-scale periodic structure on p-GaN by using nano-imprint technique and RIE techn... [more] | ED2008-158 CPM2008-107 LQE2008-102 pp.29-32 |
| LQE, ED, CPM | 2008-11-27 13:35 |
Aichi | Nagoya Institute of Technology | Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.) ED2008-159 CPM2008-108 LQE2008-103 |
The reduction of reverse-bias leakage current in GaN-based Schottky diodes was investigated using an aluminum facepack t... [more] | ED2008-159 CPM2008-108 LQE2008-103 pp.33-36 |
| LQE, ED, CPM | 2008-11-27 14:00 |
Aichi | Nagoya Institute of Technology | A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic) ED2008-160 CPM2008-109 LQE2008-104 |
A novel GaN-based electrically-pumped horizontal-cavity surface-emitting laser is presented. Surface-emission was realiz... [more] | ED2008-160 CPM2008-109 LQE2008-104 pp.37-40 |
| LQE, ED, CPM | 2008-11-27 14:35 |
Aichi | Nagoya Institute of Technology | High-Power GaN-based Blue-Violet Laser Diodes Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO) ED2008-161 CPM2008-110 LQE2008-105 |
Development of high speed recording and large capacity recording for Blu-ray optical disc systems using blue-violet lase... [more] | ED2008-161 CPM2008-110 LQE2008-105 pp.41-44 |
| LQE, ED, CPM | 2008-11-27 15:00 |
Aichi | Nagoya Institute of Technology | Achieving P-type InN and Its Characterization
-- Present Status and Future Prospects -- Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.) ED2008-162 CPM2008-111 LQE2008-106 |
[more] | ED2008-162 CPM2008-111 LQE2008-106 pp.45-50 |
| LQE, ED, CPM | 2008-11-27 15:25 |
Aichi | Nagoya Institute of Technology | Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) ED2008-163 CPM2008-112 LQE2008-107 |
1 monolayer (ML) thick InN quantum well (QW) with InGaN barrier grown by radio-frequency plasma assisted molecular beam ... [more] | ED2008-163 CPM2008-112 LQE2008-107 pp.51-56 |
| LQE, ED, CPM | 2008-11-27 15:50 |
Aichi | Nagoya Institute of Technology | Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) ED2008-164 CPM2008-113 LQE2008-108 |
We demonstrate that the apparent emission colors of InGaN-based LEDs using micro-structured multifacet quantum wells as ... [more] | ED2008-164 CPM2008-113 LQE2008-108 pp.57-60 |
| LQE, ED, CPM | 2008-11-27 16:25 |
Aichi | Nagoya Institute of Technology | Control of substrate curvature during MOVPE growth of AlGaN Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2008-165 CPM2008-114 LQE2008-109 |
[more] | ED2008-165 CPM2008-114 LQE2008-109 pp.61-64 |
| LQE, ED, CPM | 2008-11-27 16:50 |
Aichi | Nagoya Institute of Technology | Low-pressure HVPE growth and characterization of AlN on period-trench-pattered substrate Yusuke Katagiri, Kazuteru Okuura, Jiejun Wu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tetsuya Ezaki, Noriyuki Kuwano (Kyushu Univ.) ED2008-166 CPM2008-115 LQE2008-110 |
[more] | ED2008-166 CPM2008-115 LQE2008-110 pp.65-70 |
| LQE, ED, CPM | 2008-11-27 17:15 |
Aichi | Nagoya Institute of Technology | Toward high-power operation of 230nm-band AlGaN UV-LED Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) ED2008-167 CPM2008-116 LQE2008-111 |
210-350 nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive ... [more] | ED2008-167 CPM2008-116 LQE2008-111 pp.71-76 |
| LQE, ED, CPM | 2008-11-27 17:40 |
Aichi | Nagoya Institute of Technology | 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112 |
250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] | ED2008-168 CPM2008-117 LQE2008-112 pp.77-82 |
| LQE, ED, CPM | 2008-11-28 09:00 |
Aichi | Nagoya Institute of Technology | 280nm-band InAlGaN-based high-power deep-UV LEDs Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) ED2008-169 CPM2008-118 LQE2008-113 |
Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-e... [more] | ED2008-169 CPM2008-118 LQE2008-113 pp.83-88 |
| LQE, ED, CPM | 2008-11-28 09:25 |
Aichi | Nagoya Institute of Technology | Analysis of AlGaN Growth on MOVPE by Computational Simulation Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.) ED2008-170 CPM2008-119 LQE2008-114 |
We have reported analysis of reaction pathways in metalorganic vapor-phase epitaxy (MOVPE) of GaN and AlN films by using... [more] | ED2008-170 CPM2008-119 LQE2008-114 pp.89-92 |
| LQE, ED, CPM | 2008-11-28 09:50 |
Aichi | Nagoya Institute of Technology | Luminescence properties from two types of prismatic planes of InGaN Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science) ED2008-171 CPM2008-120 LQE2008-115 |
InGaN crystals yielding blue cathodoluminescence (CL) were grown by the nitridation of the mixture of GaN crystals with ... [more] | ED2008-171 CPM2008-120 LQE2008-115 pp.93-96 |
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