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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2011)
Search Results: Keywords 'from:2011-12-16 to:2011-12-16'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2011-12-16 10:00 |
Nara | NAIST | Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)  SDM2011-132 |
ZnS-based inorganic EL has been widely studied for next generation display and illumination. In the inorganic EL devices... [more] | SDM2011-132 pp.1-5 |
| SDM | 2011-12-16 10:20 |
Nara | NAIST | Basic characteristics of distributed inorganic EL panels with multi-planar electrodes array Toshihiro Nonaka (Ryukoku Univ.), Yukiharu Uraoka (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Shinichi Yamamoto (Ryukoku Univ.) SDM2011-133 |
Distributed inorganic EL devices can now be produced at a low cost using a coating type. However, there are various prob... [more] | SDM2011-133 pp.7-10 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2011-12-16 11:00 |
Nara | NAIST | Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-135 |
Breakdown characteristics of 4H-SiC PiN diodes with various JTE structures have been investigated. By combining two-zone... [more] | SDM2011-135 pp.17-21 |
| SDM | 2011-12-16 11:20 |
Nara | NAIST | Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.) SDM2011-136 |
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply DCTS (Discharge Curr... [more] | SDM2011-136 pp.23-28 |
| SDM | 2011-12-16 11:40 |
Nara | NAIST | Selective nanoscale positioning of Co nanoparticles on Ti and SiO2 Surfaces Satoshi Itakura (Ryukoku Univ.), Hirohumi Yamada (Kyoto Univ.), Yukiharu Uraoka (NAIST), Ichiro Yamashita (ATRL Panasonic), Shinichi Yamamoto (Ryukoku Univ.) SDM2011-137 |
Nowadays, research on biotechnology is progressing rapidly. The nanometer, or the size of atoms and molecules, is now th... [more] | SDM2011-137 pp.29-30 |
| SDM | 2011-12-16 13:00 |
Nara | NAIST | [Invited Talk]
Si sputtering epitaxy and its application to fabrication of monocrystalline Si solar cells Wenchang Yeh (Shimane Univ.), Yupin Fang, Hsiangen Huang (NTUST) SDM2011-138 |
[more] | SDM2011-138 pp.31-35 |
| SDM | 2011-12-16 13:30 |
Nara | NAIST | [Invited Talk]
Influence of subgap density of states on electrical properties and reliability of ZnO TFT. Mamoru Furuta, Shin-ichi Shimakawa (Kochi Univ. of Tech.) SDM2011-139 |
[more] | SDM2011-139 pp.37-41 |
| SDM | 2011-12-16 14:00 |
Nara | NAIST | Fabrication of 2D Photonic-Crystal by ZnO using Gel-Nanoimprint Process Min Zhang, Shinji Araki, Li Lu, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-140 |
In this research, 2D-photonic-crystal ZnO films were fabricated using sol-gel spin-coating and nanoimprint lithography (... [more] | SDM2011-140 pp.43-46 |
| SDM | 2011-12-16 14:20 |
Nara | NAIST | Thermal Sensor Using Poly-Si Thin-Film Transistor Jun Taya, Tomonori Mukuda, Akihiro Nakashima, Mutsumi Kimura (Ryukoku Univ.) SDM2011-141 |
[more] | SDM2011-141 pp.47-52 |
| SDM | 2011-12-16 14:40 |
Nara | NAIST | Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142 |
Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and ... [more] | SDM2011-142 pp.53-58 |
| SDM | 2011-12-16 15:20 |
Nara | NAIST | Development of Process Simulators for Laser Crystallization
-- Development of 2-Dimensional and 3-Dimentional Simulators -- Mutsumi Kimura, Kuniaki Matsuki, Ryusuke Saito, Shuji Tsukamoto (Ryukoku Univ.) SDM2011-143 |
We are developing process simulators for laser crystallization. We have developed 2-dimensional and 3-dimentional simula... [more] | SDM2011-143 pp.59-64 |
| SDM | 2011-12-16 15:40 |
Nara | NAIST | Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO2/Si interface Ryota Okada, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2011-144 |
Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues... [more] | SDM2011-144 pp.65-70 |
| SDM | 2011-12-16 16:00 |
Nara | NAIST | Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] | SDM2011-145 pp.71-76 |
| SDM | 2011-12-16 16:20 |
Nara | NAIST | Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146 |
We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] | SDM2011-146 pp.77-82 |
| SDM | 2011-12-16 16:40 |
Nara | NAIST | Charge Retentivity of DNAFET Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Shin Yokoyama (Hiroshima Univ) SDM2011-147 |
The charge retention characteristics of the DNA molecules which are fabricated and bridged between the source/drain elec... [more] | SDM2011-147 pp.83-85 |
| SDM | 2011-12-16 17:00 |
Nara | NAIST | Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-148 |
[more] | SDM2011-148 pp.87-92 |
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