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| Chair |
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Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu Microelectronics) |
| Secretary |
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Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
|
|
| Chair |
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Akira Matsuzawa (Tokyo Inst. of Tech.) |
| Vice Chair |
|
Kunio Uchiyama (Hitachi) |
| Secretary |
|
Makoto Nagata (Kobe Univ.), Minoru Fujishima (Univ. of Tokyo) |
| Assistant |
|
Yoshio Hirose (Fujitsu Labs.), Hiroaki Suzuki (Renesas) |
|
| Conference Date |
Thu, Jul 17, 2008 09:00 - 17:35
Fri, Jul 18, 2008 09:00 - 17:10 |
| Topics |
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| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Jul 17 AM
09:00 - 10:15 |
| (1) |
09:00-09:25 |
Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations  SDM2008-128 ICD2008-38 |
Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) |
| (2) |
09:25-09:50 |
Drain Current Fluctuation in High-k Dielectric p-MOSFETs
-- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric -- SDM2008-129 ICD2008-39 |
Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) |
| (3) |
09:50-10:15 |
Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM SDM2008-130 ICD2008-40 |
Gen Tsutsui, Kazuaki Tsunoda, Nayuta Kariya, Yutaka Akiyama, Tomohisa Abe, Shinya Maruyama, Tadashi Fukase, Mieko Suzuki, Yasushi Yamagata, Kiyotaka Imai (NECEL) |
| |
10:15-10:30 |
Break ( 15 min. ) |
Thu, Jul 17 AM
10:30 - 12:10 |
| (4) |
10:30-10:55 |
A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations SDM2008-131 ICD2008-41 |
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka (Renesas Tech.), Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Katsuji Satomi, Hironori Akamatsu (Matsushita Elec.), Hirofumi Shinohara (Renesas Tech.) |
| (5) |
10:55-11:20 |
A small-delay defect detection technique for dependable LSIs SDM2008-132 ICD2008-42 |
Koichiro Noguchi, Koichi Nose (NEC), Toshinobu Ono (NECEL), Masayuki Mizuno (NEC) |
| (6) |
11:20-12:10 |
[Invited Talk]
Progress of compact model for CMOS circuit design
-- Performance of HiSIM model based on the surface potential model -- SDM2008-133 ICD2008-43 |
Tatsuya Ohguro (Hiroshima Univ./Toshiba), Mitiko Miura-Mattausch (Hiroshima Univ.) |
| |
12:10-13:10 |
Lunch ( 60 min. ) |
Thu, Jul 17 PM
13:10 - 14:50 |
| (7) |
13:10-14:00 |
[Invited Talk]
Super Chip Technology to Achieve Ultimate Integration SDM2008-134 ICD2008-44 |
Mitsumasa Koyanagi, Tetsu Tanaka (Tohoku Univ.) |
| (8) |
14:00-14:50 |
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS SDM2008-135 ICD2008-45 |
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) |
| |
14:50-15:05 |
Break ( 15 min. ) |
Thu, Jul 17 PM
15:05 - 16:20 |
| (9) |
15:05-15:30 |
A Fully Logic-Process-Compatible, SESO-memory Cell with 0.1-FIT/Mb Soft Error, 100-MHz Random Cycle, and 100-ms Retention SDM2008-136 ICD2008-46 |
Norifumi Kameshiro, Takao Watanabe, Tomoyuki Ishii, Toshiyuki Mine (Hitachi, Ltd.), Toshiaki Sano (Renesas), Hidefumi Ibe, Satoru Akiyama (Hitachi, Ltd.), Kazumasa Yanagisawa, Takashi Ipposhi, Toshiaki Iwamatsu, Yasuhiko Takahashi (Renesas) |
| (10) |
15:30-15:55 |
New design technology of Independent-Gate controlled Stacked type 3D transistor for system LSI SDM2008-137 ICD2008-47 |
Yu Hiroshima, Shigeyoshi Watanabe (SIT) |
| (11) |
15:55-16:20 |
Co-design of CNT based devices and circuitry
-- How can CNT-based circuit overcome Si-CMOS? -- SDM2008-138 ICD2008-48 |
Shinobu Fujita (Toshiba RDC) |
| |
16:20-16:35 |
Break ( 15 min. ) |
Thu, Jul 17 PM
16:35 - 17:35 |
| (12) |
16:35-17:35 |
[Panel Discussion]
Future prospects on new device and circuit technologies (1)
Tatsuya Ohguro (Hiroshima Univ. and Toshiba), Mitsumasa Koyanagi (Tohoku Univ.), Toshiro Hiramoto (Univ. Tokyo) |
Fri, Jul 18 AM
09:00 - 10:15 |
| (13) |
09:00-09:25 |
Study of high-Speed low-power system LSI for sub-threshold operation SDM2008-139 ICD2008-49 |
Makoto Tsurukubo, Shigeyoshi Watanabe (SIT) |
| (14) |
09:25-09:50 |
Examination of Low-power system LSI architecture by Real time scheduling SDM2008-140 ICD2008-50 |
Yoshikazu Sato, Shigeyoshi Watanabe (SIT) |
| (15) |
09:50-10:15 |
A Sub-μs Wake-up Time Power Gating Technique with Bypass Power Line for Rush Current Support SDM2008-141 ICD2008-51 |
Koichi Nakayama, Ken-ichi Kawasaki, Tetsuyoshi Shiota, Atsuki Inoue (Fujitsu Lab.) |
| |
10:15-10:30 |
Break ( 15 min. ) |
Fri, Jul 18 AM
10:30 - 12:10 |
| (16) |
10:30-11:20 |
[Invited Talk]
CMOS-based biomedical photonic devices SDM2008-142 ICD2008-52 |
Takashi Tokuda, Jun Ohta (NAIST) |
| (17) |
11:20-12:10 |
[Invited Talk]
Problems and Prospect of 3D Integration using Wireless and Optical Interconnection Technologies SDM2008-143 ICD2008-53 |
Atsushi Iwata, Shin Yokoyama (Hiroshima Univ.) |
| |
12:10-13:10 |
Lunch ( 60 min. ) |
Fri, Jul 18 PM
13:10 - 14:00 |
| (18) |
13:10-14:00 |
[Invited Talk]
RF MEMS for Reconfigurable CMOS Radio SDM2008-144 ICD2008-54 |
Kazuya Masu (Tokyo Tech.) |
| |
14:00-14:15 |
Break ( 15 min. ) |
Fri, Jul 18 PM
14:15 - 15:55 |
| (19) |
14:15-14:40 |
Realistic future trend of non-voltile semiconductor memory and feasibility study of ultra-low-cost high-speed universal non-volatile memory
-- feasibility study of BiCS type FeRAM and MRAM -- SDM2008-145 ICD2008-55 |
Shigeyoshi Watanabe, Koichi Sugano, Shouto Tamai (Shonan Institute of Tech.) |
| (20) |
14:40-15:05 |
Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology SDM2008-146 ICD2008-56 |
Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) |
| (21) |
15:05-15:30 |
Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL SDM2008-147 ICD2008-57 |
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) |
| (22) |
15:30-15:55 |
High Performance Sub-35 nm Bulk CMOS with Hybrid Gate Structures of NMOS; Dopant Confinement Layer (DCL) / PMOS; Ni-FUSI by Using Flash Lamp Anneal (FLA) in Ni-Silicidation
-- Hybrid Gate Structures -- SDM2008-148 ICD2008-58 |
Hiroyuki Ohta (Fujitsu Lab.), Kazuo Kawamura (FML), Hidenobu Fukutome (Fujitsu Lab.), Mitsugu Tajima, Ken-ichi Okabe (FML), Keiji Ikeda, Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Lab.) |
| |
15:55-16:10 |
Break ( 15 min. ) |
Fri, Jul 18 PM
16:10 - 17:10 |
| (23) |
16:10-17:10 |
[Panel Discussion]
Future prospects on new device and circuit technologies (2)
Takashi Tokuda (NAIST), Atsushi Iwata (Hiroshima Univ.), Kazuya Masu (Tokyo Tech.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 40 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-  ge       ba |
| ICD |
Technical Committee on Integrated Circuits and Devices (ICD) [Latest Schedule]
|
| Contact Address |
Yoshiharu Aimoto (NEC Electronics Corporation)
TEL +81-44-435-1258, +81-44-435-1878
E-:  ai  cel |
Last modified: 2008-05-23 14:43:01
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