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Technical Committee on Silicon Device and Materials (SDM)

Chair		Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair		Toshihiro Sugii (Fujitsu Microelectronics)
Secretary		Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant		Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

Conference Date	Fri, Dec 4, 2009 09:20 - 17:30
Topics	Fabrication, Evaluation for Si Related Materials,
Conference Place	School of Material Science
Address	8916-5, Takayama, Ikoma, Nara 630-0192, Japan
Contact Person	Prof. Yukiharu Uraoka 0743-72-6060
Copyright and reproduction	All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Fri, Dec 4 AM 09:20 - 17:30
(1)	09:20-09:40	Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering SDM2009-151	Yusuke Kobayashi (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Masami Susaki (Osaka Pref. College of Technology), Masahiro Horita (NAIST), Yukiharu Uraoka (NAIST/CREST)
(2)	09:40-10:00	Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms SDM2009-152	Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
(3)	10:00-10:20	Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion SDM2009-153	Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
(4)	10:20-10:40	Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation. -- dopant-density dependence -- SDM2009-154	Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
(5)	10:40-11:00	Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation SDM2009-155	Kozo Nishino, Hideki Yanagisawa, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)
(6)	11:00-11:20	Electrochemical measurement by potenitiostat using thin-film transistor SDM2009-156	Kosuke Bundo, Yosiki Imuro, Koushi Setsu (Ryukoku Univ), Yuki Sagawa (NAIST), Mutsumi Kimura (Ryukoku Univ)
(7)	11:20-11:40	Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs SDM2009-157	Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.)
(8)	11:40-12:00	Si substrate processing by ethanol cluster ion beam technique SDM2009-158	Hiroshi Mukai, Hiromichi Ryuto, Mitsuaki Takeuchi, Gikan H. Takaoka (Kyoto Univ.)
	12:00-13:00	Break ( 60 min. )
(9)	13:00-13:30	[Invited Talk] Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs SDM2009-159	Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas)
(10)	13:30-13:50	Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector) -- Evaluation by simulation -- SDM2009-160	Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.)
(11)	13:50-14:10	Investigation of LTPS TFT flash memory using crystallized 3-dimentonal substrate by green laser irradiation SDM2009-161	Kazunori Ichikawa, Masahiro Matsue, Hiroshi Akamatsu (Kobe City Coll. of Tech), Yukiharu Uraoka (NAIST)
(12)	14:10-14:30	Application of thin-film devices to artificial retina SDM2009-162	Yuta Miura, Takeshi Ogura, Shiro Ohno (Ryukoku Univ.), Tomohisa Hachida, Yoshitaka Nishizaki, Takehiko Yamashita (NAIST), Takehiro Shima, Mutsumi Kimura (Ryukoku Univ.)
(13)	14:30-14:50	Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate SDM2009-163	Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.)
(14)	14:50-15:10	Neural Network of Device Level using Poly-Si TFT SDM2009-164	Daiki Mishima, Jin Taniguchi, Tomohiro Kasakawa (Ryukoku Univ.), Hiroki Tabata, Ryo Onodera (NAIST), Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.)
	15:10-15:30	Break ( 20 min. )
(15)	15:30-15:50	Crystallization of a-Si Film via Quasi-Nuclei Formed by Laser Plasma Soft X-Ray Irradiation SDM2009-165	Sinya Isoda, Naoto Matsuo, Sho Amano, Akira Heya, Shuji Miyamoto, Takayasu Mochizuki (Univ. of Hyogo.)
(16)	15:50-16:10	Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing SDM2009-166	Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.)
(17)	16:10-16:30	Stability Improvement of Printer Ink SDM2009-167	Tomohiro Oba, Sinya Maeta, Masaki Yamaguchi (Shibaura Ins. of Tech.)
(18)	16:30-16:50	Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM SDM2009-168	Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
(19)	16:50-17:10	Mechanism elucidation of ReRAM by application of new analytical method SDM2009-169	Tatsuya Makino, Kentaro Kinoshita, Kazufumi Doashi, Takatoshi Yoda, Satoru Kishida (Tottori Univ.)
(20)	17:10-17:30	Characterization of defects in NiO thin films for ReRAM SDM2009-170	Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)

Announcement for Speakers
General Talk	Each speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk	Each speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM	Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
	Contact Address	Hisahiro Ansai(Sony) Tel 046-201-3297 Fax046-202-6572 E-: HiAniny