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Technical Group on Information Sensing Technologies (ITE-IST)  (Searched in: 2018)

Search Results: Keywords 'from:2018-08-07 to:2018-08-07'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 29  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2018-08-07
09:00
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 A model and circuit for an early auditory system based on vestibulo-ocular reflex
Tkahiro Ikegami, Masayuki Ikebe, Shinya Takamaeda, Masato Motomura, Tetsuya Asai (Hokkaido Univ.)
 [more]
SDM, ICD, ITE-IST [detail] 2018-08-07
09:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Wide-band CMOS terahertz imaging pixel
Yuri Kanazawa, Shota HIramatsu, Eiichi Sano, Sayuri Yokoyama, Masayuki Ikebe (Hokkaido Univ)
 [more]
SDM, ICD, ITE-IST [detail] 2018-08-07
09:50
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Nano probe technology for sensing and its applications
Kazuhisa Sueoka (Hokkaido Univ)
 [more]
SDM, ICD, ITE-IST [detail] 2018-08-07
10:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Energy Harvesting Beat Sensors and Potential Applications -- Realization of Low Power, Low Cost, and High Accuracy IoT Sensors --
Koichiro Ishibashi (UEC) SDM2018-27 ICD2018-14
We have proposed Beat Sensors as new concept of IoT sensors. The Beat Sensor transmits ID codes, the interval time of wh... [more] SDM2018-27 ICD2018-14
pp.11-14
SDM, ICD, ITE-IST [detail] 2018-08-07
11:30
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Comparison of Sensitivity to Soft Errors of NMOS and PMOS Transistors by Using Three Types of Stacking Latches in an FDSOI process
Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi (KIT) SDM2018-28 ICD2018-15
(To be available after the conference date) [more] SDM2018-28 ICD2018-15
pp.15-20
SDM, ICD, ITE-IST [detail] 2018-08-07
12:55
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16
In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the result... [more] SDM2018-29 ICD2018-16
pp.21-24
SDM, ICD, ITE-IST [detail] 2018-08-07
13:40
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process
Yongxun Liu, Hiroyuki Tanaka (AIST), Kazuhiro Koga, Kazushige Sato (MINIMAL), Sommawan Khumpuang, Masayoshi Nagao, Takashi Matsukawa, Shiro Hara (AIST) SDM2018-30 ICD2018-17
In this work, gate-last and gate-first SOI-CMOS integrated circuits have been successfully fabricated on the minimal waf... [more] SDM2018-30 ICD2018-17
pp.25-30
SDM, ICD, ITE-IST [detail] 2018-08-07
14:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] SDM2018-31 ICD2018-18
pp.31-34
SDM, ICD, ITE-IST [detail] 2018-08-07
15:00
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 A 0.6V 9bit PWM Differential Arithmetic Circuit
Fumiya Kojima, Tomochika Harada (Yamagata Univ) SDM2018-32 ICD2018-19
In this paper, we design and evaluate the analog / PWM conversion circuit and the PWM differential arithmetic circuit wh... [more] SDM2018-32 ICD2018-19
pp.35-40
SDM, ICD, ITE-IST [detail] 2018-08-07
15:25
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 A 65nm SOTB Based-On Code-Modulated Synchronized-OOK Transmitter for Normally-Off Wireless Sensor Networks
Van-Trung Nguyen, Ryo Ishikawa, Koichiro Ishibashi (The UEC) SDM2018-33 ICD2018-20
In this paper, Code-Modulated Synchronized-OOK (CMS-OOK) modulation scheme is proposed. Based on 65nm SOTB (Silicon-On T... [more] SDM2018-33 ICD2018-20
pp.41-46
SDM, ICD, ITE-IST [detail] 2018-08-07
16:00
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] A Battery Management System for Wireless Sensor Devices
Ken-ichi Kawasaki, Jun-ichi Nagata, Hiroyuki Nakamoto (Fujitsu Labs.) SDM2018-34 ICD2018-21
It would be important to observe battery state of charge at each IoT device accurately even with small circuit area and ... [more] SDM2018-34 ICD2018-21
pp.47-52
SDM, ICD, ITE-IST [detail] 2018-08-07
16:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Power Consumption Estimation by Die Temperature for Processors Implemented on FPGA
Hiroaki Kaneko, Akinori Kanasugi (Tokyo Denki Univ.) SDM2018-35 ICD2018-22
The importance of thermal management and temperature sensing is increasing for processors with power consumption lower t... [more] SDM2018-35 ICD2018-22
pp.53-58
SDM, ICD, ITE-IST [detail] 2018-08-08
09:00
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Research Progress on Resistance Change Device Based on Oxide Materials -- Application for Non-volatile Memory and Neuromorphic Device --
Hisashi Shima, Makoto Takahashi, Yasuhisa Naitoh, Hiroyuki Akinaga (AIST) SDM2018-36 ICD2018-23
 [more] SDM2018-36 ICD2018-23
pp.59-64
SDM, ICD, ITE-IST [detail] 2018-08-08
09:45
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2018-37 ICD2018-24
We present a new finding that subthreshold slope (SS) variability is reduced at high temperature in both bulk and silico... [more] SDM2018-37 ICD2018-24
pp.65-70
SDM, ICD, ITE-IST [detail] 2018-08-08
10:20
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Neuromorphic Operation using an Atom/Ion Movement-Type Device
Takeo Ohno (Oita Univ.) SDM2018-38 ICD2018-25
Artificial synaptic operation has been achieved by using an atom/ion movement-type Atomic Switch. In addition, the Atomi... [more] SDM2018-38 ICD2018-25
pp.71-72
SDM, ICD, ITE-IST [detail] 2018-08-08
11:05
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Extremely low power device using crystalline oxide semiconductor
Kiyoshi Kato (SEL)
 [more]
SDM, ICD, ITE-IST [detail] 2018-08-08
12:50
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Measurements and Analysis of Power Supply Noise in Digital IC Chip
Kosuke Jike, Akihiro Tsukioka, Ryohei Sawada, Koh Watanabe, Noriyuki Miura, Makoto Nagata (Kobe Univ) SDM2018-39 ICD2018-26
Dynamic power noise can be the root cause of electromagnetic compatibility (EMC) problems of electromagnetic interferenc... [more] SDM2018-39 ICD2018-26
pp.77-82
SDM, ICD, ITE-IST [detail] 2018-08-08
13:15
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Lecture] A Highly Symmetrical 10T 2-Read/Write Dual-port SRAM Bitcell Design In 28nm High-k/Metal-gate Planar Bulk CMOS Technology
Yuichiro Ishii, Miki Tanaka, Makoto Yabuuchi, Yohei Sawada, Shinji Tanaka, Koji Nii (Renesas), Tien Yu Lu, Chun Hsien Huang, Shou Sian Chen, Yu Tse Kuo, Ching Cheng Lung, Osbert Cheng (UMC) SDM2018-40 ICD2018-27
We propose a highly symmetrical 10T 2-read/write (2RW) dual-port (DP) SRAM bitcell in 28-nm high-k/metal-gate planar bul... [more] SDM2018-40 ICD2018-27
pp.83-88
SDM, ICD, ITE-IST [detail] 2018-08-08
13:40
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] CMOS Annealing Machine for Combinatorial Optimization Problems
Masanao Yamaoka (Hitachi) SDM2018-41 ICD2018-28
(To be available after the conference date) [more] SDM2018-41 ICD2018-28
p.89
SDM, ICD, ITE-IST [detail] 2018-08-08
14:35
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 Proposal of reconfigurable system LSI with 3D flashtechnology and its application to combinationlogic, FF circuit and FPGA
Shigeyoshi Watanabe (Shonan Insti. of Tech.) SDM2018-42 ICD2018-29
 [more] SDM2018-42 ICD2018-29
pp.91-94
 Results 1 - 20 of 29  /  [Next]  
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