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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SC | 2024-06-07 15:00 |
Fukushima | Univ. of Aizu (Primary: On-site, Secondary: Online) |
Reliability testing techniques using pseudo-failures in microservice architectures Yusuke Nishi, Gakuho Taguchi (Hitachi) |
[more] | |
| SC | 2023-06-02 15:20 |
Fukushima | UBIC 3D Theater, University of Aizu (Primary: On-site, Secondary: Online) |
IoV platforms to accelerate the development of connected car solutions Hiroki Ito, Yusuke Nishi (Hitachi), Yoshitaka Atarashi (Hitachi Astemo)  SC2023-6 |
[more] | SC2023-6 pp.32-37 |
| ICM, IPSJ-IOT, IPSJ-CSEC | 2023-05-12 14:00 |
Kochi | Eikokuji Campus, Kouchi University of Technology. (Primary: On-site, Secondary: Online) |
Development of drift correction function to correct differences between source code and system Hiroki Ito, Yusuke Nishi (Hitachi), Yoshitaka Atarashi (Hitachi Astemo) ICM2023-10 |
[more] | ICM2023-10 pp.47-52 |
| CPM | 2022-03-01 14:45 |
Online | Online | Evaluation of forming characteristics of Oxide-based resistive switching cells Tomoaki Ohno, Yusuke Nishi (NIT Maizuru College) CPM2021-77 |
[more] | CPM2021-77 pp.20-23 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
| EID, SDM | 2015-12-14 11:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Distribution of Forming Characteristics in NiO-based ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) EID2015-12 SDM2015-95 |
[more] | EID2015-12 SDM2015-95 pp.13-17 |
| SDM, EID | 2014-12-12 17:30 |
Kyoto | Kyoto University | Resistive switching characteristics of NiO-based ReRAM after semi-forming process. Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133 |
In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] | EID2014-38 SDM2014-133 pp.129-134 |
| SDM | 2012-12-07 16:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) SDM2012-137 |
We have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of ... [more] | SDM2012-137 pp.129-132 |
| IN, NV (Joint) |
2012-07-19 13:30 |
Hokkaido | Hokkaido Univ. | Centralized Multicast Tree Control for rapid VXLAN path failover Yusuke Nishi, Masayuki Sakata, Junji Kinoshita (Hitachi) IN2012-33 |
VXLAN (Virtual eXtensible Local Area Network), a large network virtualization technique, utilizes Multicast communicatio... [more] | IN2012-33 pp.1-6 |
| SDM | 2011-12-16 17:00 |
Nara | NAIST | Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-148 |
[more] | SDM2011-148 pp.87-92 |
| SDM | 2010-12-17 13:50 |
Kyoto | Kyoto Univ. (Katsura) | Effects of thermal treatment in vacuum on the electrical characteristics of Pt/NiO/Pt stack structures for ReRAM Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-193 |
[more] | SDM2010-193 pp.45-49 |
| RCS, AN, MoNA, SR (Joint) |
2010-03-05 16:40 |
Kanagawa | YRP | An Indoor Localization in NLOS Environments Using Outlier Detection Based on Grouping of Sensors for Sensor Networks Yusuke Nishi, Tomoaki Ohtsuki (Keio Univ.) RCS2009-339 |
One of major localization algorithms uses Received Signal Strength Indicator (RSSI). A troublesome problem in indoor R... [more] |
RCS2009-339 pp.479-484 |
| SDM | 2009-12-04 16:30 |
Nara | NAIST | Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-168 |
Nickel Oxide (NiO), known as non-stoichiometric compound, is expected as a candidate of ReRAM because of its resistive s... [more] | SDM2009-168 pp.89-92 |
| SDM | 2009-12-04 17:10 |
Nara | NAIST | Characterization of defects in NiO thin films for ReRAM Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-170 |
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] | SDM2009-170 pp.97-100 |
| SDM | 2008-12-05 10:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) SDM2008-184 |
NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the mate... [more] | SDM2008-184 pp.1-4 |
| USN, IPSJ-UBI | 2008-07-18 16:15 |
Tokyo | Tokyo Denki University （Tokyo) | Distributed Localization with Unknown Attenuation Coefficient in Wireless Sensor Networks Yusuke Nishi, Tomoaki Ohtsuki (Keio Univ.) USN2008-35 |
Recently, a localization attracts much attention in sensor networks. One of major localization algorithms uses Receive... [more] |
USN2008-35 pp.141-146 |
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