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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, EID, SDM, ICD, MRIS, QIT, SCE, OME, EMD (Joint) [detail] |
2018-03-08 13:50 |
Shizuoka | [Invited Talk]
Present status and prospect of III-V RF devices Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.)  EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 |
III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compa... [more] | EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67 pp.9-10 |
|
| SDM | 2016-01-28 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
CMOS photonics technologies based on heterogeneous integration on Si Mitsuru Takenaka, Younghyun Kim, Jaehoon Han, Jian Kan, Yuki Ikku, Yongpeng Cheng, Jinkwon Park, SangHyeon Kim, Shinichi Takagi (Univ. of Tokyo) SDM2015-124 |
In this paper, we present heterogeneous integration of SiGe/Ge and III-V semiconductors on Si for electronic-photonic in... [more] | SDM2015-124 pp.17-20 |
| OPE, OFT | 2012-03-02 14:00 |
Tokyo | Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed Barriers Ken Morita, Hyuga Ueyama, Takahiro Kitada, Toshiro Isu (Univ. of Tokushima) OFT2011-79 OPE2011-205 |
In this work, time-resolved optical measurements of GaAs/AlAs multilayer cavities with the Er-doped InAs quantum dots (Q... [more] | OFT2011-79 OPE2011-205 pp.31-34 |
|
| MW, ED | 2011-01-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | III-V quantum well channel MOSFET with back electrode Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148 |
III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] | ED2010-188 MW2010-148 pp.69-73 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-29 08:55 |
Kyoto | Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers Takahiro Kitada, Tomoya Takahashi, Ken Morita, Toshiro Isu (Univ. of Tokushima) PN2009-51 OPE2009-189 LQE2009-171 |
A GaAs$\slash$AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In$_{0... [more] | PN2009-51 OPE2009-189 LQE2009-171 pp.85-88 |
|
| SDM | 2008-06-10 09:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] | SDM2008-49 pp.41-46 |
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