Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ICD, ITE-IST [detail] |
2019-08-09 14:10 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET” Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2019-51 ICD2019-16 |
In this study, We report the effect of the substrate bias (Vsub) and the positive charge (Qox) in the buried oxide (BOX)... [more] |
SDM2019-51 ICD2019-16 pp.89-93 |
SDM |
2018-11-09 15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-76 |
In order to utilize the Radio Frequency (RF) signal power existing in the living environment, a RF rectifier that realiz... [more] |
SDM2018-76 pp.59-64 |
SDM, ICD, ITE-IST [detail] |
2018-08-07 14:25 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18 |
In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The co... [more] |
SDM2018-31 ICD2018-18 pp.31-34 |
SDM, ICD, ITE-IST [detail] |
2017-07-31 15:30 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
SOI image sensor for ion flight time measurement using thermal noise suppressing sample hold circuit Seokjin Na, Masayuki ikebe, sayuri yokoyama, shinya takamaeda, masato motomura, tetsuya asai (Hokkaiodo Univ.), hisanao hazama (Osaka Univ.), youichi fujita, yasuo arai (KEK) |
[more] |
|
SDM, ICD, ITE-IST [detail] |
2017-08-02 11:35 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33 |
The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was ... [more] |
SDM2017-45 ICD2017-33 pp.109-114 |
SDM |
2017-06-20 13:20 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Development of Quantum Imaging Detector using SOI Technology
-- Looking Elementary Particles and X-rays with Semiconductor -- Yasuo Arai (KEK) SDM2017-22 |
Silicon is a good material for detecting quantum beam (Photon, X-ray, Gamma-ray, Electron, Ion, Neutron etc.) and also g... [more] |
SDM2017-22 pp.5-8 |
ICD, SDM, ITE-IST [detail] |
2016-08-03 14:40 |
Osaka |
Central Electric Club |
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) SDM2016-66 ICD2016-34 |
We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltag... [more] |
SDM2016-66 ICD2016-34 pp.117-121 |
SANE |
2013-12-02 15:30 |
Overseas |
VAST/VNSC(2nd Dec.) & Melia Hotel (3rd Dec), Hanoi, Vietnam |
Cryogenic CMOS analog switch for far-infrared image sensors Koichi Nagase (SOKENDAI), Takehiko Wada, Hirokazu Ikeda (JAXA), Yasuo Arai (KEK), Morifumi Ohno (AIST) SANE2013-89 |
We are developing far-infrared image sensors for astronomical observations. In far-infrared observations, detectors and ... [more] |
SANE2013-89 pp.105-108 |
SANE |
2010-10-28 16:00 |
Overseas |
Ramada Hotel, Jeju-do, Korea |
[Invited Talk]
Cryogenic readout electronics for space borne far-infrared image sensors Hirohisa Nagata, Takehiko Wada, Hirokazu Ikeda (JAXA), Yasuo Arai (KEK), Morifumi Ohno (AIST) SANE2010-108 |
We have been developing low power cryogenic readout electronics for space borne large format far-infrared image sensors.... [more] |
SANE2010-108 pp.229-234 |
ICD, ITE-IST |
2010-07-23 14:10 |
Osaka |
Josho Gakuen Osaka Center |
[Invited Talk]
TDC and SOI Radiation Image Sensor for Particle Physics Yasuo Arai (KEK IPNS) |
[more] |
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