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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SS | 2014-05-08 16:35 |
Mie | ISE SHIMIN - KATSUDOU Center | Suggesting Reusable Code Based on Structural Unit of Programming Language and Past Reuse Akio Ohtani, Tomoya Ishihara, Yoshiki Higo, Shinji Kusumoto (Osaka Univ.)  SS2014-6 |
Code search techniques are well-known as one of the techniques helping code reuse. In particular, code search technique... [more] |
SS2014-6 pp.31-36 |
| COMP | 2014-03-10 11:05 |
Tokyo | A Heuristic for Quickest Transshipment Problem and its Application to Evacuation Planning Akio Ohta (Kyoto Univ.), Naoyuki Kamiyama (Kyusyu Univ.), Atsushi Takizawa (Osaka City Univ.), Naoki Katoh (Kyoto Univ.) COMP2013-64 |
Quickest transshipment problem is defined by a multi-source, multi-sink dynamic flow network, each source of that has a ... [more] | COMP2013-64 pp.29-34 |
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| SDM | 2013-06-18 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics Katsunori Makihara, Ryo Fukuoka, Hai Zhang, Yuuki Kabeya (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-53 |
[more] | SDM2013-53 pp.47-50 |
| SDM | 2013-06-18 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2013-56 |
[more] | SDM2013-56 pp.61-66 |
| SDM, ED (Workshop) |
2012-06-28 08:45 |
Okinawa | Okinawa Seinen-kaikan | Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:00 |
Okinawa | Okinawa Seinen-kaikan | Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System Motoki Fukusima (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:45 |
Okinawa | Okinawa Seinen-kaikan | Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM | 2012-06-21 09:00 |
Aichi | VBL, Nagoya Univ. | Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si rich Oxide/TiN System Motoki Fukusima (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2012-43 |
[more] | SDM2012-43 pp.1-6 |
| SDM | 2012-06-21 11:15 |
Aichi | VBL, Nagoya Univ. | Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49 |
[more] | SDM2012-49 pp.33-36 |
| SDM | 2012-06-21 13:55 |
Aichi | VBL, Nagoya Univ. | Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-53 |
[more] | SDM2012-53 pp.53-58 |
| SDM | 2012-06-21 14:45 |
Aichi | VBL, Nagoya Univ. | Chemical Analysis of As+-implanted Ge(100) Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-55 |
[more] | SDM2012-55 pp.63-67 |
| SDM | 2011-07-04 12:00 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Ractions in HfO2 Atomic-Layer-Deposition on Ge(100) and Post-deposition Anneal with Ultrathin TiOx Capping on Ge(100) Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Kento Mishima, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-58 |
To control interfacial reaction between high-k dielectric and Ge(100) we focused on insertion of TiOx ultrathin layer wi... [more] | SDM2011-58 pp.47-50 |
| SDM | 2011-07-04 14:00 |
Aichi | VBL, Nagoya Univ. | Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61 |
We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] | SDM2011-61 pp.63-68 |
| SDM | 2011-07-04 16:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67 |
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] | SDM2011-67 pp.97-102 |
| ED, SDM | 2010-06-30 14:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58 |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has b... [more] |
ED2010-57 SDM2010-58 pp.31-36 |
| ED, SDM | 2010-07-02 12:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-94 SDM2010-95 |
[more] | ED2010-94 SDM2010-95 pp.189-194 |
| SDM | 2010-06-22 11:45 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electrical Properties of Ge MIS and Ge/Metal Structures Tomohiro Fujioka, Tatsuya Bando, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-38 |
[more] | SDM2010-38 pp.27-32 |
| SDM | 2010-06-22 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | The influence of Y incorporation into TiO2 on Electronic States and Resistive Switching Characteristics Akio Ohta, Yuta Goto, Mohd Fairuz Kamarulzaman, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2010-47 |
[more] | SDM2010-47 pp.79-84 |
| SDM | 2009-06-19 14:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-36 |
The chemical bonding features of ultrathin Ge oxide layers, which were prepared on Ge(100) by wet-chemical treatment, lo... [more] | SDM2009-36 pp.57-60 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
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