Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2020-11-19 15:20 |
Online |
Online |
[Invited Talk]
A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel Tatsuya Kunikiyo, Hidenori Sato, Takeshi Kamino, Koji Iizuka, Ken'ichiro Sonoda, Tomohiro Yamashita (Renesas Electronics) SDM2020-26 |
A novel phase-detection auto focus (PDAF) technique for incident 850 nm plane wave is demonstrated using Ge-on-Si layer ... [more] |
SDM2020-26 pp.21-24 |
SDM |
2020-02-07 09:35 |
Tokyo |
Tokyo University-Hongo |
[Invited Talk]
Impact of Homogeneously Dispersed Al Nanoclusters by Si-monolayer Insertion into Hf0.5Zr0.5O2 Film on FeFET Memory Array with Tight Threshold Voltage Distribution Tadashi Yamaguchi, Keiichi Maekawa, Takahiro Ohara, Atsushi Amo, Eiji Tsukuda, Kenichiro Sonoda, Hiroshi Yanagita, Masao Inoue, Masazumi Matsuura, Tomohiro Yamashita (Renesas) SDM2019-89 |
[more] |
SDM2019-89 pp.5-8 |
SDM |
2018-10-17 14:00 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Fin-FET MONOS for Next Generation Automotive-MCU Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas) SDM2018-52 |
[more] |
SDM2018-52 pp.1-5 |
AI, JSAI-KBS, JSAI-DOCMAS, JSAI-SAI, IPSJ-ICS |
2018-03-02 15:00 |
Hokkaido |
|
Mizuki Shinbe, Souichiro Yokoyama, Tomohiro Yamashita, Hidenori Kawamura (Hokudai) AI2017-43 |
In the fashion industry, products are developed and sold based on impression words such as "girly" "sweet" against cloth... [more] |
AI2017-43 pp.1-7 |
SDM |
2018-01-30 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas) SDM2017-94 |
Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node em... [more] |
SDM2017-94 pp.13-16 |
ICD |
2017-04-20 14:55 |
Tokyo |
|
[Invited Lecture]
First demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) ICD2017-7 |
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] |
ICD2017-7 pp.35-38 |
SDM |
2017-01-30 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) SDM2016-134 |
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the ... [more] |
SDM2016-134 pp.17-20 |
SDM, ICD |
2015-08-25 10:55 |
Kumamoto |
Kumamoto City |
[Invited Talk]
Novel Single p+Poly-Si/Hf/SiON Gate Stack Technology on Silicon-on-Thin-Buried-Oxide (SOTB) for Ultra-Low Leakage Applications Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Masaharu Kobayashi, Toshiro Hiramoto (UT) SDM2015-67 ICD2015-36 |
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf... [more] |
SDM2015-67 ICD2015-36 pp.53-57 |
ICD, SDM |
2014-08-05 09:50 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2014-72 ICD2014-41 |
The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and stati... [more] |
SDM2014-72 ICD2014-41 pp.55-58 |
CAS, SIP, MSS, VLD, SIS [detail] |
2014-07-09 15:50 |
Hokkaido |
Hokkaido University |
high speed super-resolution based on compressed sensing Tomohiro Yamashita, Jaehoon Yu, Yoshinori Takeuchi, Masaharu Imai (Osaka Univ.) CAS2014-16 VLD2014-25 SIP2014-37 MSS2014-16 SIS2014-16 |
This paper proposes a speed-up superresolution(SR) method based on
compressed sensing, where SR is a class of technique... [more] |
CAS2014-16 VLD2014-25 SIP2014-37 MSS2014-16 SIS2014-16 pp.75-80 |
ICD |
2014-04-18 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Tomoko Mizutani, Toshiro Hiramoto (UTokyo) ICD2014-11 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] |
ICD2014-11 pp.53-57 |
EE, WPT (Joint) |
2012-11-09 13:25 |
Tokyo |
|
High Efficiency MW-Band Rectenna Using a Coaxial Dielectric Resonator and Distributed Capacitors Tomohiro Yamashita, Kazuhiro Honda, Koichi Ogawa (Toyama Univ.) |
To realize a high efficiency rectenna for long distance transmission, it is effective to increase the amplitude of high ... [more] |
|
SDM |
2009-12-04 13:00 |
Nara |
NAIST |
[Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) SDM2009-159 |
(Advance abstract in Japanese is available) [more] |
SDM2009-159 pp.43-47 |
SDM |
2008-10-10 13:00 |
Miyagi |
Tohoku Univ. |
The Application Property of B18H22 Implantation for Millisecond Annealing Yoji Kawasaki, Seiichi Endo, Masashi Kitazawa, Yoshiki Maruyama, Tomohiro Yamashita, Takashi Kuroi, Hidefumi Yoshimura, Masahiro Yoneda (Renesas) SDM2008-161 |
We investigated the application properties of cluster implantation for milli-second annealing processing. We successful... [more] |
SDM2008-161 pp.37-40 |
SDM |
2007-10-05 15:25 |
Miyagi |
Tohoku Univ. |
Shallow Junction Formation Using Combination of LSA and Spike-RTA Seiichi Endo, Yoshiki Maruyama, Yoji Kawasaki, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas) SDM2007-191 |
In this work, Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demon... [more] |
SDM2007-191 pp.61-64 |
|