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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-06-21 10:20 |
Aichi | VBL, Nagoya Univ. | High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] | SDM2012-47 pp.23-26 |
| SCE | 2011-10-12 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in electrical characteristics of NbN tunnel junctions with plasma-nitrided AlNx barriers Tatsunori Funai, Naoto Naito, Hiroyuki Akaike, Akira Fujimaki (Nagoya Univ.) SCE2011-15 |
We present the fabrication process of NbN tunnel junctions with plasma-nitrided AlNx barriers and the electrical charact... [more] | SCE2011-15 pp.19-24 |
| SCE | 2009-07-21 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication of NbN Josephson Junctions with Plasma-Nitrided AlN barrier Yuki Nagai, Naoto Naito, Hiroyuki Akaike, Akira Fujimaki (Nagoya Univ.) SCE2009-14 |
We present the preparation process of plasma-nitrided AlNx barriers for NbN Josephson junctions and the electrical chara... [more] | SCE2009-14 pp.29-33 |
| CPM | 2007-11-17 10:15 |
Niigata | Nagaoka University of Technology | Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118 |
Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the... [more] | CPM2007-118 pp.69-72 |
| SDM | 2007-10-04 15:15 |
Miyagi | Tohoku Univ. | Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM Shigemi Murakawa (Tokyo Electron/Tohoku Univ.), Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka (Tokyo Electron AT), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-175 |
Nitrogen profile variations were systematically studied for the DRAM plasma nitridation process, using AR-XPS, and their... [more] | SDM2007-175 pp.11-14 |
| SDM | 2007-06-08 09:25 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs Masayuki Terai, Shinji Fujieda (NEC) SDM2007-40 |
The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability ... [more] | SDM2007-40 pp.49-54 |
| SDM | 2007-06-08 14:40 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Formation and characterization of Ge$_3$N$_4$ thin layers Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.) SDM2007-49 |
We have investigated the nitridation of germanium substrate by our original high-density plasma source. Pure amorphous G... [more] | SDM2007-49 pp.97-100 |
| CPM | 2005-11-11 15:10 |
Fukui | Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) |
The quality of SiC-MOS devices has been critically limited by carbon related defects in the SiC oxide film grown by ther... [more] | CPM2005-156 pp.25-28 |
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