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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-10-19 16:30 |
Online |
Online |
[Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62 |
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] |
SDM2022-62 pp.34-37 |
SDM |
2014-06-19 10:30 |
Aichi |
VBL, Nagoya Univ. |
Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] |
SDM2014-46 pp.17-20 |
ED, SDM, CPM |
2012-05-18 11:15 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33 |
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] |
ED2012-31 CPM2012-15 SDM2012-33 pp.67-72 |
SDM |
2010-11-11 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175 |
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] |
SDM2010-175 pp.23-28 |
SDM |
2010-02-05 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams Akira Uedono (Tsukuba Univ.), Naoya Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, Masaki Yoshimaru (STARC), Nagayasu Oshima, Toshiyuki Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology) SDM2009-190 |
Defects in SiOCH/Cu damascene structures were probed using monoenergetic positron beams. Doppler broadening spectra of t... [more] |
SDM2009-190 pp.49-52 |
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