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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2022-10-19
16:30
Online Online [Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2022-62
Threshold voltage instability is one of the reliability concerns for SiC MOSFETs. NO post-oxidation annealing (NO-POA) i... [more] SDM2022-62
pp.34-37
SDM 2014-06-19
10:30
Aichi VBL, Nagoya Univ. Stability of vacancy defect around metal/Ge interfaces; first-principles study
Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] SDM2014-46
pp.17-20
ED, SDM, CPM 2012-05-18
11:15
Aichi VBL, Toyohashi Univ. of Technol. Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) ED2012-31 CPM2012-15 SDM2012-33
Silicon carbide (SiC) is a promising material for high power devices with low energy loss. However we have never complet... [more] ED2012-31 CPM2012-15 SDM2012-33
pp.67-72
SDM 2010-11-11
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2010-175
Effective work function of p-type gate electrodes on Hf-based high-k dielectrics is known to decrease after high tempera... [more] SDM2010-175
pp.23-28
SDM 2010-02-05
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams
Akira Uedono (Tsukuba Univ.), Naoya Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, Masaki Yoshimaru (STARC), Nagayasu Oshima, Toshiyuki Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology) SDM2009-190
Defects in SiOCH/Cu damascene structures were probed using monoenergetic positron beams. Doppler broadening spectra of t... [more] SDM2009-190
pp.49-52
 Results 1 - 5 of 5  /   
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