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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE 2022-01-28
09:30
Online Online Automatic Capacitive Current Balancing Multi-Phase Reconfigurable LLC Converter with Wide Voltage Gain Range for On-Board Battery Charger
Kakeru Koyama, Masatoshi Uno (Ibaraki Univ.) EE2021-40
On-board battery chargers need a large-current capacity isolated dc-dc converter with a wide voltage gain range as volta... [more] EE2021-40
pp.52-57
ED, CPM, LQE 2021-11-26
14:55
Online Online High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] ED2021-32 CPM2021-66 LQE2021-44
pp.79-82
LQE, CPM, ED 2020-11-26
13:30
Online Online High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] ED2020-7 CPM2020-28 LQE2020-58
pp.25-28
EE, IEE-HCA 2019-05-17
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Output Characteristics of S-SP type Wireless Power Transfer Allows Large Changes in Power Transmission Distance and Load -- Mechanism of Suppressing Fluctuation of Received Voltage Derived from k-typed Block Diagram and Trial Demonstration --
Hideaki Abe EE2019-12
Research on wireless power transfer is being conducted from various perspectives. As a continuing effort of wireless p... [more] EE2019-12
pp.77-82
EE 2017-01-26
13:40
Nagasaki Nagasaki University Wireless Power Transfer Proposal with Stick Primary Coil Array and Confirmation of Voltage Stabilization against Position and Load Fluctuation
Hideaki Abe (Panasonic) EE2016-55
We have constructed a method that can conserve primary coil material for wall hanging wireless power transfer. Spot feed... [more] EE2016-55
pp.39-44
EE, IEE-SPC 2016-07-14
10:15
Tokyo Kikai-Shinko-Kaikan Bldg. Relationship between voltage gain tolerance and resonant circuit variation of LLC resonant converter -- Verification by Monte Carlo simulation --
Hiroyuki Haga (SHINDENGEN), Hidenori Maruta, Fujio Kurokawa (Nagasaki Univ.) EE2016-7
LLC converter is widely used today and its characteristics and design procedure have been widely studied. However the re... [more] EE2016-7
pp.13-18
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2012-11-27
13:00
Fukuoka Centennial Hall Kyushu University School of Medicine Accurate I/O Buffer Impedance Self-adjustment using Threshold Voltage and Temperature Sensors
Zhi Li, Hiroshi Tsutsui, Hiroyuki Ochi, Takashi Sato (Kyoto Univ.) VLD2012-79 DC2012-45
With the increased operating frequency and the reduction of feature
size, achieving low error-rate data transmission be... [more]
VLD2012-79 DC2012-45
pp.117-122
EE 2011-01-27
16:10
Kumamoto   A Novel Multi-Resonant Current ZVS Converter Operated in Fixed Frequency
Tatsuya Hosotani (Murata manufacturing), Akihiro Sawada, Koji Fujiwara, Yoshiyuki Ishihara (Doshisha Univ.) EE2010-30
We propose a novel multi-resonant current ZVS converter operated in fixed frequency. Output power is modulated by the c... [more] EE2010-30
pp.11-16
EA, US
(Joint)
2011-01-21
11:00
Kyoto Doshisha Univ. Influences on Jitter Characteristics of Digital Audio Interface by the AC Power condition
Hiroki Koyama, Atsushi Hata, Takahiro Yoshida, Noriaki Masui (TUS) US2010-105 EA2010-118
It is said that the sound quality and perceptible sound scape are different by the condition of AC power supplied to the... [more] US2010-105 EA2010-118
pp.77-82
EE, IEE-SPC 2010-07-30
15:40
Kochi Kochi National College of Technology Investigations on Output/Input Voltage Gain of Soft Switching PWM Boost DC-DC Converter with Switched Capatitor Snubber
Yujiro Takeuchi, Tomokazu Mishima (Kobe Univ.), Mutsuo Nakaoka (Kyungnam Univ.) EE2010-14
The boost DC-DC converter with large voltage step-up ratio is gathering much attention in variety application fields suc... [more] EE2010-14
pp.111-115
ED 2009-10-15
15:05
Fukui   Electron emission characteristics of field emitter array with hafnium nitride cathode
Yasuhito Gotoh, Keita Ikeda, Yuko Miyata, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.) ED2009-119
We have fabricated field emitter array (FEA) with hafnium nitride (HfN) cathode.
The electron emission characteristics ... [more]
ED2009-119
pp.17-20
EMD 2009-03-06
15:50
Tokyo Kougakuin Univ. Simulation study of analog input buffer characteristics in CMOS integrated circuits
Yuuto Horiki, Keiko Fukuda (Tokyo Metropolitan Coll. of Ind Tech.) EMD2008-144
Complementary-type analog input buffer is proposed for low-voltage operation in CMOS integrated circuits. It consists o... [more] EMD2008-144
pp.41-44
CAS, CS, SIP 2009-03-03
13:10
Gifu Nagaragawa Convention Center [Poster Presentation] A general class of circuit transfer functions employing current controlled current followers and voltage followers
Katsuya Sueishi (Matsue College. of Tech.), Takao Tsukutani (Matsue College of Tech.), Yasuaki Sumi (Tottori Univ. of Envi-ronmental Studies,), Noboru Yabuki (Tsuyama College. of Tech.) CAS2008-130 SIP2008-193 CS2008-104
This paper introduces a realization of a general class of circuit transfer functions employing unity gain cells (UGCs). ... [more] CAS2008-130 SIP2008-193 CS2008-104
pp.165-170
CS, SIP, CAS 2008-03-07
10:25
Yamaguchi Yamaguchi University Electronically tunable current-mode biquadratic circuit using plus type DVCCCs and grounded capacitors
Kazushi Nagira, Takao Tsukutani (Matsue National Col.), Yasuaki Sumi (Tottori Univ. Environmental Studies), Noboru Yabuki (Tsuyama National Col.) CAS2007-133 SIP2007-208 CS2007-98
This paper introduces a current-mode biquadratic circuit employing differential voltage current-controlled current conve... [more] CAS2007-133 SIP2007-208 CS2007-98
pp.47-52
ED 2007-11-27
13:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ICD 2007-04-12
14:20
Oita   A voltage scalable advanced DFM RAM with accelerated screening for low power SoC platform
Hiroki Shimano, Fukashi Morishita, Katsumi Dosaka, Kazutami Arimoto (Renesas Technology Corp.) ICD2007-8
The advanced-DFM (Design For Manufacturability) RAM provides the solution for the limitation of SRAM voltage scaling dow... [more] ICD2007-8
pp.41-46
EMCJ 2006-03-09
17:10
Tokyo Kikai-Shinko-Kaikan Bldg. A study on appllying S matrix for extraction of parasitic element characteristic on PCB
Naoyuki Yamashita, Hiroshi Inoue (Akita Univ.), Takashi Ono (Akita Electronics Systems)
When some stages of amplifiers are driven by single source power, and the feedback loop can be formed via the feedline ... [more] EMCJ2005-154
pp.95-100
MW, ED 2005-01-18
14:25
Tokyo   -
-, -, -, - (OKI)
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] ED2004-221 MW2004-228
pp.53-58
 Results 1 - 18 of 18  /   
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