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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-11 15:15 |
Online | Online | [Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices Koji Eriguchi (Kyoto Univ.)  SDM2021-57 |
Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] | SDM2021-57 pp.23-28 |
| OME, IEE-DEI | 2021-03-01 13:30 |
Online | Online | [Invited Talk]
Trend for Research and Development on Pb-free Sn-perovskite solar cells Shuzi Hayase (UEC) OME2020-19 |
Certified efficiency of the solar cells consisting of conventional Pb perovskite as the light harvesting layer reached 2... [more] | OME2020-19 pp.1-3 |
| SDM | 2019-11-07 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Compact Modeling Perspective
-- Bridge to Industrial Applications -- Mitiko Miura-Mattausch (HU) SDM2019-72 |
This paper gives an overview about compact-model development history, which is undertaking the evolution as a bridge bet... [more] | SDM2019-72 pp.17-20 |
| OME | 2014-10-10 10:55 |
Osaka | Osaka University Nakanoshima Center | Photo-excited carrier transport of organic thin-film solar cell Mitsuru Inada, Nozomi Isobe, Tomoki Miyake, Shouzou Yamanaka, Tadashi Saitoh (Kansai Univ.) OME2014-38 |
We investigate photo-excited carrier lifetime of CuPc/C60-based organic thin-film solar cell to reveal the carrier trans... [more] | OME2014-38 pp.5-8 |
| SDM | 2013-11-14 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) SDM2013-104 |
We systematically study the channel size dependence of 1/f noise in silicon tri-gate nanowire transistors by measuring a... [more] | SDM2013-104 pp.27-30 |
| SDM | 2012-12-07 11:30 |
Kyoto | Kyoto Univ. (Katsura) | Study of carrier behavior in memory transistor using DNA Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo) SDM2012-121 |
We produced electrodes with a gap of about 100nm by using the substrate Si, DNA was fixed between the electrodes, and it... [more] | SDM2012-121 pp.37-40 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| ED | 2008-03-06 15:15 |
Yamagata | Characterization of charge traps at organic heterojunction interfaces using displacement current measurement Takashi Katsumata, Yasuo Kimura (Tohoku Univ.), Hisao Ishii (Chiba Univ.), Michio Niwano (Tohoku Univ.) ED2007-255 |
It was reported that the performance of a lot of organic devices was improved by introduction of heterojunctions to them... [more] | ED2007-255 pp.17-20 |
|
| ED, CPM, SDM | 2006-05-19 14:00 |
Aichi | VBL, Toyohashi University of Technology | Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.) |
In the photoconductivity decay measurement, a slow component is often observed, especially for wide-bandgap materials, e... [more] | ED2006-38 CPM2006-25 SDM2006-38 pp.101-106 |
| RCS, AP, WBS, SR, MW, MoNA (Joint) |
2006-03-02 09:00 |
Kanagawa | YRP | A Study on Accuracy Improvement of Carrier Interferometry based Channel Estimation Technique under High Mobility Conditions Kazunari Yokomakura, Seiichi Sampei (Osaka Univ.), Hiroshi Harada (NICT), Norihiko Morinaga (Hiroshima International Univ.) |
This paper proposes an accuracy improvement method of a carrier interferometry (CI) based channel estimation technique f... [more] | RCS2005-199 pp.127-132 |
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