Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2007-222
Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin
Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST)
pp. 1 - 4
SDM2007-223
Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser
Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd)
pp. 5 - 8
SDM2007-224
Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing
Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo)
pp. 9 - 13
SDM2007-225
Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation
Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.)
pp. 15 - 18
SDM2007-226
Electrical conduction characteristics of NiO thin films for ReRAM
Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 19 - 22
SDM2007-227
Effective Activation of Phosphorus atom in Si film using ELA
Takashi Noguchi (Univ. of Ryukyus)
pp. 23 - 26
SDM2007-228
In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing
Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.)
pp. 27 - 29
SDM2007-229
Observation of Dislocation Motion in Thin Si1-xGex Film by Light Scattering Method
Akito Hara (Tohoku Gakuin Univ.), Naoyoshi Tamura, Tomoji Nakamura (Fujitsu Lab. Ltd.)
pp. 31 - 34
SDM2007-230
Axial orientation of epitaxially grown Fe3Si on Ge(111)
Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.)
pp. 35 - 38
SDM2007-231
Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices
Shunsuke Kunimatsu (Kyoto Univ.), Yoshikazu Terai (Osaka Univ.), Yoshihito Maeda (Kyoto Univ.)
pp. 39 - 42
SDM2007-232
Interface modification by NH3 plasma in SiNx passivation for solar cell
Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST)
pp. 43 - 46
SDM2007-233
Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes
Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 47 - 50
SDM2007-234
Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs
Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.)
pp. 51 - 54
SDM2007-235
Neural Network of Device Level using Poly-Si TFT
Ryo Onodera, Tomohiro Kasakawa, Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.), Hiroyuki Hara, Satoshi Inoue (Seiko Epson Corp.)
pp. 55 - 58
SDM2007-236
Fabrication and Physical Properties of Ferroelectric Thin Films by Alcohol-related Materials
Masaki Yamaguchi (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
pp. 59 - 62
SDM2007-237
Active-Matrix Driving of Magneto Optic Spatial Light Modulator using Poly-Si TFT
Hideo Oi, Mutsumi Kimura (Ryukoku Univ.), Yoichi Suzuki, Syogo Ishikawa, Hiromitsu Umezawa (FDK), Hiroyuki Takagi, Kim Joo-Young, Hironaga Uchida, Mitsuteru Inoue (Toyohashi Univ.of Tech.)
pp. 63 - 66
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.