IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 110, Number 261

Component Parts and Materials

Workshop Date : 2010-10-28 - 2010-10-29 / Issue Date : 2010-10-21

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Table of contents

CPM2010-91
Characteristic of Potassium niobate/Barium titanate composites
Ryousuke Usui, Noriko Bamba (Shinshu Univ.)
pp. 1 - 5

CPM2010-92
Growth of potassium tantalate single crystal by the directional solidification method
Takayuki Takenaka, Noriko Bamba, Keigo Hoshikawa (Shinshu Univ.)
pp. 7 - 11

CPM2010-93
Structure and magnetic properties of SBA-15 with magnetic metal
Yoshihiro Shinohara, Tetsuji Haeiwa (Shinshu Univ.)
pp. 13 - 17

CPM2010-94
Magnetic properties of TbFeCo films with Au underlayer for perpendicular magnetic recording
Songtian Li, Xiaoxi Liu, Akimitsu Morisako (Shinshu Univ.)
pp. 19 - 22

CPM2010-95
Preparation of ZnO Nanowires by Ultrasonic Spray Pyrolysis -- Effect of Solvent on Crystal Morphology --
Myo Than Htay, Hiroshi Yasumatsu, Takanori Tanaka, Yoshio Hashimoto (Shinshu Univ.)
pp. 23 - 26

CPM2010-96
Structure and electric properties of RF-sputtered p-type nickel oxide thin films
Atsushi Nagata, Kazuo Uchida, Atsushi Koizumi, Hiroshi Ono, Shinji Nozaki (UEC)
pp. 27 - 31

CPM2010-97
Formation of SrAl2O4:Eu, Dy thin films by combined the Unbalanced Magnetron Sputtering and the Facing Target Sputtering Method
Takashi Kuno, Minoru Saito, Kazuaki Kobayashi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata (Niigata Univ.)
pp. 33 - 37

CPM2010-98
Fluorine-free tungsten deposition by metal-chloride-reduction chemical vapor deposition
Takehito Watanabe, Akira Shibata, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
pp. 39 - 42

CPM2010-99
Low temperature growth of SiC films by HW-CVD using graphite filaments
Yuya Sakaguchi, Hironori Nakamura, Jun Arima, Kazuhisa Moriyama, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.)
pp. 43 - 46

CPM2010-100
Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation
Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
pp. 47 - 50

CPM2010-101
Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact
Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
pp. 51 - 54

CPM2010-102
Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.)
pp. 55 - 58

CPM2010-103
Preparation of Cu2ZnSnS4 Thin Film for solar cell -- Effect of Precursors and Sulfurization conditions --
Myo Than Htay, Yasuyoshi Kando, Yoshio Hashimoto (Shinshu Univ.)
pp. 59 - 63

CPM2010-104
Examination of the Mg-Cu Thin Films by Alternate Layer Deposition
Takeru Shimizu, Toshiro Tannai, Hiroaki Matsui, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami (Niigata Univ.)
pp. 65 - 69

CPM2010-105
Examination of ITO Thin Films Deposited at Low-tempurature for OLEDs by Sputtering Method
Yohei Nakamura, Chang Liu, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.)
pp. 71 - 75

CPM2010-106
Preparation of two layers Organic Thin Film using Alq3/PEDOT by spin coat
Hina Chujo, Atsushi Noda, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.)
pp. 77 - 80

CPM2010-107
Effects of Deposition Morphology of EL Phosphor on ZnO Nanorods on Characteristics of Lateral DCEL Devices
Tomomasa Satoh, Yuki Matuzawa, Takaki Kaneshiro, Takashi Hirate (Kanagawa Univ.)
pp. 81 - 86

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan