Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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LQE2010-98
Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.)
pp. 1 - 6
LQE2010-99
Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE
Tsutomu Araki, Keisuke Kawashima, Tomohiro Yamaguchi, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 7 - 10
LQE2010-100
GaN growth on pseudo (111)Al substrates by RF-MBE
Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.)
pp. 11 - 14
LQE2010-101
Growth characteristics of GaNP layer and InAs-based QDs on Si substrate
Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto (Tokyo Inst. of Tech.)
pp. 15 - 19
LQE2010-102
AlN growth on SiC by LP-HVPE
Kenta Okumura, Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Osamu Eryu (NIT)
pp. 21 - 24
LQE2010-103
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE
Kohei Fujita, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken)
pp. 25 - 28
LQE2010-104
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells
Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.)
pp. 29 - 32
LQE2010-105
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy
-- Efficiency droop mechanism assessed by SNOM --
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 33 - 36
LQE2010-106
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping
Takao Oto, Ryan G. Banal (Kyoto Univ.), Ken Kataoka (Ushio Inc.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 37 - 40
LQE2010-107
High Efficiency AlInN Ultraviolet Photodiodes on AlN Template
Yusuke Sakai, Junki Ichikawa, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 41 - 45
LQE2010-108
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
pp. 47 - 50
LQE2010-109
High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.)
pp. 51 - 54
LQE2010-110
Characterization of insulated gates on GaN and AlGaN/GaN structures
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.)
pp. 55 - 58
LQE2010-111
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.)
pp. 59 - 62
LQE2010-112
Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.)
pp. 63 - 66
LQE2010-113
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI)
pp. 67 - 70
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.