IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2010-11-11 - 2010-11-12 / Issue Date : 2010-11-04

SDM2010-171
[Invited Talk] 2010 SISPAD Review
Yoshinari Kamakura (Osaka Univ.)
pp. 1 - 4

SDM2010-172
[Invited Talk] Latest Trends in Simulation and Characterization of Statistical CMOS Variability and Reliability -- Review of 2010 SISPAD Workshop1 --
Shuichi Toriyama (Toshiba Corp.)
pp. 5 - 10

SDM2010-173
[Invited Talk] Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.)
pp. 11 - 15

SDM2010-174
[Invited Talk] Statistical Evaluation of Random Telegraph Sygnal in MOSFET
Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 17 - 22

SDM2010-175
[Invited Talk] Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
pp. 23 - 28

SDM2010-176
High Transient Performance of Low-Dropout(LDO) regulator
Fouzhiwei Tong, Cong-Kha Pham (UEC)
pp. 29 - 33

SDM2010-177
Topography simulation of BiCS memory hole etching and modeling of SiO2 and Si etching
Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, Naoki Tamaoki (Toshiba)
pp. 35 - 39

SDM2010-178
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface
Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku)
pp. 41 - 43

SDM2010-179
[Invited Talk] An overview of VLSI design automation and its future prospective
Atsushi Takahashi (Osaka Univ.)
pp. 45 - 46

SDM2010-180
Modeling of Single-Event-Transient Pulse Generation in Inverter Cells
Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete)
pp. 47 - 52

SDM2010-181
Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs
Akihiro Tanaka, Yasunori Oritsuki, Hideyuki Kikuchihara, Masataka Miyake, Hans Juergen Mattausch, Mitiko Miura-Mattausch (Hiroshima Univ.), Yong Liu, Keith Green (TI)
pp. 53 - 57

SDM2010-182
Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Region
Hironori Sakamoto, Takahiro Iizuka (Renesas Electronics)
pp. 59 - 64

SDM2010-183
Strain Dependence of Hole Currents in Silicon Nanowire FETs
Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST)
pp. 65 - 69

SDM2010-184
Design Feasibility of Si Wire GAA MOSFET -- Analytical model for the design guideline --
Shunsuke Nakano, Yasuhisa Omura (Kansai Univ.)
pp. 71 - 76

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan