Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2010-216
[Keynote Address]
Technical Challenges for 3D Packaging and Chip Package Interaction
Yasumitsu Orii, Kazushige Toriyama, Akihiro Horibe, Keiji Matsumoto, Katsuyuki Sakumai (IBM Japan)
pp. 1 - 6
SDM2010-217
Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI
Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.)
pp. 7 - 12
SDM2010-218
Application of Compliant Bump Technology to Image Sensor
Naoya Watanabe, Tanemasa Asano (Kyushu Univ.)
pp. 13 - 18
SDM2010-219
A highly reliable Cu interconnect with CuSiN and Ti-based barrier metal: Impact of oxgen surface treatment
Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Kei Watanabe, Satoshi Kato, Atsuko Sakata, Akihiro Kajita, Hideki Shibata (Toshiba Corp.)
pp. 19 - 23
SDM2010-220
Networked nanographite growth using photoemission-assisted enhanced plasma CVD: discharge condition dependence of the crystallographic quality
Shuichi Ogawa (Tohoku Univ./JST), Motonobu Sato (Fujitsu/JST), Haruki Sumi (Tohoku Univ.), Mizuhisa Nihei (Fujitsu/JST), Yuji Takakuwa (Tohoku Univ./JST)
pp. 25 - 30
SDM2010-221
Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition
Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan)
pp. 31 - 35
SDM2010-222
Networked-Nanographite Wire Grown by Metal-Photoemission-assisted Plasma-enhanced CVD without Catalysts
Motonobu Sato (Fujitsu Ltd./JST/AIST), Shuichi Ogawa (Tohoku Univ./JST), Eiji Ikenaga (JASRI/JST), Yuji Takakuwa (Tohoku Univ./JST), Mizuhisa Nihei (Fujitsu Ltd./JST/AIST), Naoki Yokoyama (AIST)
pp. 37 - 42
SDM2010-223
Stress Mapping in Thinned Si Wafer with Cu-TSV and Cu-Sn Microbumps
Murugesan Mariappan, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi (Tohoku Univ.)
pp. 43 - 47
SDM2010-224
Development of Low Temperature Bump-less TSV Process in 3D Stacking Technology
Hideki Kitada, Nobuhide Maeda (The Univ. of Tokyo), Koji Fujimoto (Dai Nippon Printing), Yoriko Mizushima, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Laboratories Ltd.), Takayuki Ohba (The Univ. of Tokyo)
pp. 49 - 53
SDM2010-225
Highly hermetic barrier Low-k SiC (k<3.5) by using new precursor
Tatsuya Usami, Chikako Kobayashi, Yukio Miura (Renesas), Shuji Nagano (Taiyo-Nippon Sanso), Koichi Ohto (Renesas), Hideharu Shimizu (Taiyo-Nippon Sanso), Takeshi Kada, Tatsuya Ohira (Tri Chemical Lab. Inc.), Kunihiro Fujii (Renesas)
pp. 55 - 58
SDM2010-226
Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond
S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic)
pp. 59 - 63
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.