Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2010-33
Growth of InSb films on the V-grooved Si(001) substrate with InSb bi-layer
Tatsuya Iwasugi, Sara Khamseh, Azusa Kadoda, Kimihiko Nakatani, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
pp. 1 - 4
ED2010-34
Fabrication and characterization of InAs ultra-thin films on flexible substrates
Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST)
pp. 5 - 9
ED2010-35
Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.)
pp. 11 - 15
ED2010-36
Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors
Toshi-kazu Suzuki, Nariaki Tanaka (JAIST)
pp. 17 - 20
ED2010-37
Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs
Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.)
pp. 21 - 24
ED2010-38
Fabrication of high-frequency and high-power AlGaN/GaN HEMTs
Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.)
pp. 25 - 30
ED2010-39
Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs
Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB)
pp. 31 - 35
ED2010-40
Understanding of C-V characteristics in AlGaN/GaN MIS structure
Chihoko Mizue (Hokkaido Univ., RCIQE), Tamotsu Hashizume (Hokkaido Univ., RCIQE, JST-CREST)
pp. 37 - 40
ED2010-41
Effect of interface properties on characteristics of carbon nanotube FETs
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 41 - 45
ED2010-42
Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs
Takahiro Homma, Hisanao Watanabe, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Science.)
pp. 47 - 52
ED2010-43
Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region
Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ)
pp. 53 - 58
ED2010-44
Promotion of power generation in Si solar cells made from low-purity Si wafers
Fumihiko Hirose, Yuki Sano, Satoru Tuzuki, Takahiko Suzuki (Yamagata Univ.)
pp. 59 - 61
ED2010-45
Removal of Cu contaminants on silicon material surfaces by defect passivation etchless cleaning solutions
Masao Takahashi, Yuko Higashi, Hiroaki Narita, Hitoo Iwasa, Hikaru Kobayashi (Osaka Univ/JST)
pp. 63 - 68
ED2010-46
Photo corrosion of Metal Gate Electrodes during Wet
Daisuke Watanabe (Daikin Industries,Ltd.), Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.)
pp. 69 - 74
ED2010-47
Methyl-BCN Film using Low Temperature Etching.
Hidemitsu Aoki, Makoto Hara, Takuro Masuzumi, Zhiming Lu, Tomohiro Kuki, Chiharu Kimura, Takashi Sugino (Osaka Univ.)
pp. 75 - 80
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.