Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2011-119
Microwave Power Beaming Experiments in Tronto and Hawaii for the Solar Power Satellite
Nobuyuki Kaya, Masashi Iwashita (Kobe Univ.)
pp. 1 - 6
ED2011-120
A Fundamental Study on Super Thin One-Layered Wave Absorber Using a High Dielectric Loss Material in Microwave Band
Takato Fujita, Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.), Takashi Wano, Yuuki Fukuda (NITTO Denko LTD.)
pp. 7 - 12
ED2011-121
A study of CMOS-technology-based millimeterwave LPF/HPF/BPF with transmission zeros by using coupled-line and transmission line
Kosei Tanii (UEC), Mitsuo Makimoto (Sakura Tech), Sadao Igarashi, Kuniaki Fukui, Kouichi Kobinata (RF Chips), Koji Wada (UEC)
pp. 13 - 18
ED2011-122
Design of a Quasi-Millimeter-Wave Bandpass Filter Using Multilayered SIW Dual-Mode Resonators
Kazuya Tobita, Zhewang Ma, Masataka Ohira (Saitama Univ.)
pp. 19 - 24
ED2011-123
Band Broadening of Waveguide/Microstrip-line Transformer for Millimeter-wave Band
Toshitatsu Suzuki, Yozo Utsumi, Noboru Morita, Takefumi Hiraguri (Nippon Inst. of Tech.), Munehiro Yokota, Toshihisa Kamei (NDA), Kiyozumi Chino, Ikurou Aoki, Hirosuke Suzuki (KEYCOM)
pp. 25 - 30
ED2011-124
A System Design Method for Direct Sampling WLAN Receiver
Noriaki Saito, Yohei Morishita, Tadashi Morita (Panasonic)
pp. 31 - 34
ED2011-125
Photon-recycling GaN p+n Diodes
Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.)
pp. 35 - 40
ED2011-126
Distortion Compensation of Class-E Power Amplifier Modulating Envelope Pulse Width for Quadrature Amplitude Modulation Signal
Shota Fujioka, Yohtaro Umeda (Tokyo Univ. of Sience), Osamu Takyu (Shinshu Univ.)
pp. 41 - 46
ED2011-127
Multi-stage Balanced RF Rectifier Circuit
Kota Yamada, Takashi Arakawa, Masamune Takeda, Jun Uemura (Maspro), Kunio Sakakibara, Nobuyoshi Kikuma (Nagoya Inst. of Tech.), Takashi Ohira (Toyohashi Univ. Tech.)
pp. 47 - 52
ED2011-128
[Special Talk]
Simply Structured Spaces and Vector Potentials
Kaneyuki Kurokawa (Former Fujitsu Lab.)
pp. 53 - 58
ED2011-129
Study of source charging time in InGaAs MOSFET
Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech)
pp. 59 - 62
ED2011-130
Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition
Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT)
pp. 63 - 68
ED2011-131
A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems
Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT)
pp. 69 - 74
ED2011-132
Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT)
pp. 75 - 79
ED2011-133
Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
pp. 81 - 85
ED2011-134
Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence
Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 87 - 90
ED2011-135
High temperature device characteristics of AlGaN-Channel HEMTs
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.)
pp. 91 - 95
ED2011-136
Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures
Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST)
pp. 97 - 100
ED2011-137
High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
pp. 101 - 105
ED2011-138
Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications
Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI)
pp. 107 - 110
ED2011-139
Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates
Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 111 - 115
ED2011-140
X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power
Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA)
pp. 117 - 120
ED2011-141
High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI)
pp. 121 - 123
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.