Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2011-159
[Invited Talk]
Deterministic-doped Silicon Devices and Their Quantum Transport
Takahiro Shinada, Masahiro Hori (Waseda Univ.), Filipo Guagliardo (Politecnico di Milano), Yukinori Ono (NTT), Kuninori Kumagai, Takashi Tanii (Waseda Univ.), Enrico Prati (CNR)
pp. 1 - 5
SDM2011-160
Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors
Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton)
pp. 7 - 11
SDM2011-161
KFM observation of individual dopant potentials and electron charging
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.)
pp. 13 - 18
SDM2011-162
High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.)
pp. 19 - 24
SDM2011-163
High-frequency characterization of InAs nanowire MISFETs
Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho (Sophia Univ.), Kai Blekker, Werner Prost, Franz-Josef Tegude (Univ. of Duisburg-Essen)
pp. 25 - 29
SDM2011-164
Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama)
pp. 31 - 34
SDM2011-165
Gain enhancement in graphene terahertz amplifier with resonant structure
Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.)
pp. 35 - 40
SDM2011-166
Light emission from Silicon quantum-well by tunneling current injection
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL)
pp. 41 - 46
SDM2011-167
Observation of Conductance Quantization during SPM Scratching
Ryutaro Suda, Takahiro Ohyama, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech)
pp. 47 - 52
SDM2011-168
Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration
Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 53 - 58
SDM2011-169
Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films
Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
pp. 59 - 64
SDM2011-170
Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias
Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.)
pp. 65 - 69
SDM2011-171
Stochastic resonance using a steep-subthreshold-swing transistor
Katsuhiko Nishiguchi, Akira Fujiwara (NTT)
pp. 71 - 76
SDM2011-172
The Luttinger-liquid behavior in single-walled carbon nanotube networks
Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu (Hokkaido Univ.)
pp. 77 - 82
SDM2011-173
Charge distribution near interface of high-k gate insulator in CNFETs
Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 83 - 87
SDM2011-174
Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.)
pp. 89 - 93
SDM2011-175
Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method
Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.)
pp. 95 - 99
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.