Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2012-19
[Invited Talk]
Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes
Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
pp. 1 - 6
SDM2012-20
Improvement in crystalline quality of GaAsN alloy by high temperature growth
Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 7 - 10
SDM2012-21
Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate
Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.)
pp. 11 - 14
SDM2012-22
Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.)
pp. 15 - 18
SDM2012-23
Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy
Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.)
pp. 19 - 23
SDM2012-24
A Surface-stress Sensor Based on a MEMS Fabry-Perot Interferometer for Label-free Protein Detection
Kazuhiro Takahashi, Hiroki Oyama, Nobuo Misawa, Koichi Okumura, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.)
pp. 25 - 28
SDM2012-25
Fabrication and transmit-receive characteristics of ultrasonic transducers array using epitaxial PZT thin films on γ-Al2O3/Si substrates
Katsuya Ozaki, Masato Nishimura, Keisuke Suzuki, Yasuyuki Numata (Toyohashi tech.), Nagaya Okada (Honda Electronics), Daisuke Akai, Makoto Ishida (Toyohashi tech.)
pp. 29 - 33
SDM2012-26
Fabrication of portable hydrogen sensors based on photochemically deposited SnO2 thin films
Dengbaoleer Ao, Yukihisa Moriguchi, Masaya Ichimura (Nagoya Inst. of Tech.Univ)
pp. 35 - 38
SDM2012-27
Preparation and evaluation of Ga2O3 oxygen sensors
Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.)
pp. 39 - 42
SDM2012-28
High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech)
pp. 43 - 48
SDM2012-29
Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.)
pp. 49 - 52
SDM2012-30
Evaluation of GaN substrates for vertical GaN power device applications
Tetsu Kachi, Tsutomu Uesugi (Toyota RDL)
pp. 53 - 56
SDM2012-31
Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy
Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT)
pp. 57 - 61
SDM2012-32
Low temperature crystallization of SiC films by metal induced growth technique
Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.)
pp. 63 - 66
SDM2012-33
Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation
Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA)
pp. 67 - 72
SDM2012-34
Growth and characterization of strained Ge epitaxial layers on SiGe substrates
Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.)
pp. 73 - 77
SDM2012-35
Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface by First Principles Study
Wujisiguleng Bao, Masaya Ichimura (Nagoya Inst. of Tech)
pp. 79 - 83
SDM2012-36
Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions
Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 85 - 89
SDM2012-37
H2O2 treatment of the Cu2O thin films deposited by the electrochemical method
Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 91 - 94
SDM2012-38
Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures
Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.)
pp. 95 - 98
SDM2012-39
Preparation and evaluation of LiMn2O4 films prepared by sputtering method
Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.)
pp. 99 - 104
SDM2012-40
Co-catalyitic effect on improving the photocatalytic properties of TiO2 films
Masaaki Isai, Ikuta Nakamura, Yuuki Hieda, Fumiya Fukazawa (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytech.Univ.)
pp. 105 - 109
SDM2012-41
A tunable color filter based on sub-wavelength gratings using electrostatic microactuator
Hiroaki Honma, Hajime Miyao, Kazuhiro Takahashi, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.)
pp. 111 - 115
SDM2012-42
Analysis of Optical Frequency Signal Transmission through Whispering Gallery Mode
Masashi Fukuhara, Yenling Yu, Takuma Aihara, Kyohe Nakagawa, Hirotaka Yamashita (Toyohashi Univ. of Tech.), Kenzo Yamaguchi (Kagawa Univ.), Mitsuo Fukuda (Toyohashi Univ. of Tech.)
pp. 117 - 121
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.