Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2013-64
High-Power Operation and Applications of InGaN Laser Diode
Hiroyuki Hagino, Katsuya Samonji, Shinji Yoshida, Shinichi Takigawa, Kiyoshi Morimoto, Toshiyuki Takizawa, Hideki Kasugai, Kazuhiko Yamanaka, Takuma Katayama (Panasonic)
pp. 1 - 4
ED2013-65
Texture formation by anisotropic dry etching of m-plane GaN, and light extraction efficiency improvement of textured m-plane GaN LED
Toshiyuki Fujita, Atsushi Yamada, Akira Inoue, Ryo Kato, Toshiya Yokokawa (Panasonic)
pp. 5 - 9
ED2013-66
Study on improvement of the light extraction efficiency in 350-nm-emission UV-LED
Tsubasa Nakashima, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 11 - 16
ED2013-67
Bow management of substrate for nitride semiconductor devices by internally focused laser processing
-- application to silicon substrate --
Natsuko Aota, Hideo Aida, Hidetoshi Takeda (Namiki Precision Jewel)
pp. 17 - 20
ED2013-68
Electrical properties of Si/SiC heterojunctions fabricated using surface-activated bonding
Shota Nishida, Jianbo Liang, Masashi Morimoto, Naoteru Shigekawa (Osaka City Univ.), Manabu Arai (New Japan Radio)
pp. 21 - 25
ED2013-69
Fabrication of Tandem Solar Cells by Using Surface-Activated Bonding
Jianbo Liang (Osaka City Univ.), Shota Nishida, Masashi Morimoto, Naoteru Shigekawa (Osaka City University)
pp. 27 - 30
ED2013-70
Investigation on the optimum MQW structure for InGaN/GaN solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.)
pp. 31 - 34
ED2013-71
Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates
Kenji Shiojima, Yuhei Kihara, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal)
pp. 35 - 38
ED2013-72
AC Operation of Low-Mg-Doped p-GaN Schottky Diodes
Kenji Shiojima, Toshichika Aoki (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Metal)
pp. 39 - 42
ED2013-73
Quantum Efficiency of p-GaN with NEA surface for high brightness electron source
Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.)
pp. 43 - 46
ED2013-74
Study on C doping in GaN and AlGaN by MOVPE
Yuya Wakasugi, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 47 - 50
ED2013-75
A novel method for crystallizations of aluminum nitride
PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 51 - 55
ED2013-76
Fabrication of the multi-junction GaInN based solar cells using tunnel junction
Hironori Kurokawa, Tomomi Goda, Mitsuru Kaga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.)
pp. 57 - 61
ED2013-77
OMVPE growth and red luminescence properties of Eu doped GaN/AlGaN multiple quantum well structures
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)
pp. 63 - 66
ED2013-78
Deep-level transient spectroscopy study on defect levels in Eu,Si-codoped GaN grown by organometallic vapor phase epitaxy
Souichirou Kuwata, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)
pp. 67 - 70
ED2013-79
Growth of GaN with thin 3C-SiC buffer layer on Si(111) substrate
Masayoshi Katagiri, Kenta Izumi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hidehiko Oku, Hidetoshi Asamura, Keisuke Kawamura (Air Water R&D)
pp. 71 - 74
ED2013-80
Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE
Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.)
pp. 75 - 78
ED2013-81
Control of nucleation for AlN growth on 6H-SiC substrate by low-pressure HVPE
Shin Kitagawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 79 - 82
ED2013-82
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic)
pp. 83 - 86
ED2013-83
Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer
Noritoshi Maeda, Hideki Hirayama (RIKEN)
pp. 87 - 90
ED2013-84
Development of AlGaN DUV-LEDs
Masamichi Ippommatsu, Akira Hirano (UVCR), Hiroshi Amano (Nagoya Univ.), Isamu Akasaki (Meijyo Univ.)
pp. 91 - 94
ED2013-85
Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs
Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.)
pp. 95 - 100
ED2013-86
Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3
Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.)
pp. 101 - 105
ED2013-87
Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui)
pp. 107 - 112
ED2013-88
Photoelectrode properties of GaN porous structures formed by photo-assisted electrochemical process
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.)
pp. 113 - 116
ED2013-89
Evaluation of unwanted radiated emission from GaN-HEMT switching circuit
Toshihide Ide, Ryousaku Kaji, Mitsuaki Shimizu (AIST), Kenji Mizutani, Hiroaki Ueno, Nobuyuki Otsuka, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
pp. 117 - 120
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.