IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 115, Number 402

Electron Device

Workshop Date : 2016-01-20 / Issue Date : 2016-01-13

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Table of contents

ED2015-112
[Invited Lecture] Evaluation technology for SiC wafer and device characteristics
Makoto Kitabatake (FUPET)
pp. 1 - 6

ED2015-113
[Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric)
pp. 7 - 12

ED2015-114
[Invited Lecture] State-of-the-art technology of gallium oxide power devices
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura)
pp. 13 - 18

ED2015-115
[Invited Lecture] The unique features of GaN power devices and the technologies to utilize their innate advantages
Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM)
pp. 19 - 24

ED2015-116
[Invited Lecture] Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model -- Comparison of semiconductor materials --
Toshiyuki Oishi, Makoto Kasu (Saga Univ.)
pp. 25 - 29

ED2015-117
[Invited Lecture] GaN Schottky Barrier Diode and Microwave Power Transmission
Yasuo Ohno (LaS)
pp. 31 - 35

ED2015-118
[Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.)
pp. 37 - 41

ED2015-119
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell
Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric)
pp. 43 - 48

ED2015-120
[Invited Lecture] Development of GaN-HEMT for Microwave Applications
Takahisa Kawai (SEDI)
pp. 49 - 54

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan