IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 117, Number 333

Lasers and Quantum Electronics

Workshop Date : 2017-11-30 - 2017-12-01 / Issue Date : 2017-11-23

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Table of contents

LQE2017-62
A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy
Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony)
pp. 1 - 6

LQE2017-63
Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs
Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.)
pp. 7 - 10

LQE2017-64
Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells
Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony)
pp. 11 - 14

LQE2017-65
Optical properties of AlGaN quantum wires formed on AlN with macrostep surface
Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 15 - 18

LQE2017-66
Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate
Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 19 - 22

LQE2017-67
Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices
Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.)
pp. 23 - 26

LQE2017-68
Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy
Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.)
pp. 27 - 32

LQE2017-69
Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates -- Metal workfunction dependence of Schottky barrier height --
Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.)
pp. 33 - 38

LQE2017-70
A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition
Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 39 - 44

LQE2017-71
Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer
Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara (Osaka Univ.)
pp. 45 - 48

LQE2017-72
Two-step graded p-AlGaN structure for deep UV-LEDs
Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
pp. 49 - 53

LQE2017-73
Achievement of AlGaN deep-UV LED using photonic crystal(PhC) -- Achievement of high-EQE(10%) AlGaN deep-UV LED using highly-reflective PhC on p-contact layer --
Yukio Kashima (Marubun), Noritoshi Maeda (RIKEN), Eriko Matsuura (Marubun), Masafumi Jo (RIKEN), Takeshi Iwai, Toshiro Morita (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Ryuichiro Kamimura, Yamato Osada (ULVAC), Yuichi Kurashima, Hideki Takagi (AIST), Hideki Hirayama (RIKEN)
pp. 55 - 60

LQE2017-74
Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures
NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.)
pp. 61 - 64

LQE2017-75
Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba)
pp. 65 - 68

LQE2017-76
Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress
Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)
pp. 69 - 72

LQE2017-77
Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 73 - 76

LQE2017-78
Two-step crystal growth of GaN nanowire by MOCVD
Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.)
pp. 77 - 82

LQE2017-79
Homoepitaxial growth on sputtered AlN templates by MOVPE
Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 83 - 86

LQE2017-80
Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG
Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.)
pp. 87 - 90

LQE2017-81
Thermal annealing of semipolar AlN on m-plane sapphire
Masafumi Jo, Satoshi Minami, Hideki Hirayama (RIKEN)
pp. 91 - 94

LQE2017-82
Dye sensitized solar cells using zeolite coated TiO2 photonanodes
Takahiro Imai, Yoshiharu Mori, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.)
pp. 95 - 98

LQE2017-83
Application of the FDTD Aglgorithm with Envelope Method to Optical Analysis of Organic Photovoltaics
Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)
pp. 99 - 100

LQE2017-84
Enhanced efficiency of quantum dot sensitized solar cell by localized surface plasmon resonance of silver nanoparticles
Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.)
pp. 101 - 105

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan